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Melt instabilities on semiconductor surfaces induced by laser radiation

Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined that spontaneous segregation of uniform temperature stage of crystal lattice and...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2000
Hauptverfasser: Bonchik, A.Yu., Dacko, B.J., Demchuk, V.I., Kiyak, S.G., Palyvoda, I.P., Shnyr, A.F.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121141
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Melt instabilities on semiconductor surfaces induced by laser radiation / A.Yu. Bonchik, B.J. Dacko, V.I. Demchuk, S.G. Kiyak, I.P. Palyvoda, A.F. Shnyr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 311-315. — Бібліогр.: 8 назв. — англ.

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