Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films

In this work, the results of investigations of DLi spectra in α-SiC crystals and films with a low impurity concentration have been presented. Photoluminescence spectra of lightly doped SiC single crystals and films with the impurity concentration of ND–NA ~ (2…8)∙10¹⁶ cm⁻³, ND ~ (5…8)∙10¹⁷ cm⁻³, and...

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Бібліографічні деталі
Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2015
Автори: Vlaskina, S.I., Mishinova, G.N., Vlaskin, V.I., Rodionov, V.E., Svechnikov, G.S.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121144
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 209-214. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Vlaskina, S.I.
Mishinova, G.N.
Vlaskin, V.I.
Rodionov, V.E.
Svechnikov, G.S.
author_facet Vlaskina, S.I.
Mishinova, G.N.
Vlaskin, V.I.
Rodionov, V.E.
Svechnikov, G.S.
citation_txt Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 209-214. — Бібліогр.: 9 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description In this work, the results of investigations of DLi spectra in α-SiC crystals and films with a low impurity concentration have been presented. Photoluminescence spectra of lightly doped SiC single crystals and films with the impurity concentration of ND–NA ~ (2…8)∙10¹⁶ cm⁻³, ND ~ (5…8)∙10¹⁷ cm⁻³, and ND–NA >3∙10¹⁷ cm⁻³, ND ≥ 1∙10¹⁸ cm⁻³ (NDLsamples) were investigated within the temperature range 4.2…77 K. Complex spectroscopic study of one-dimensional disordered structures caused by solid phase transformations in SiC crystals was presented. Disordered growth D-layers in lightly doped crystals and α-SiC films were investigated using low temperature photoluminescence. The analysis testifies that DL and SF spectra hand-in-hand follow the structure transformations. It has been shown that the DL and SF spectra of luminescence reflect the fundamental logic of SiC polytypes structure. This allows to observe the structure changes at the phase transformations, the growth of SiC polytypes and to control their aggregates.
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spelling Vlaskina, S.I.
Mishinova, G.N.
Vlaskin, V.I.
Rodionov, V.E.
Svechnikov, G.S.
2017-06-13T15:42:16Z
2017-06-13T15:42:16Z
2015
Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 209-214. — Бібліогр.: 9 назв. — англ.
1560-8034
DOI: 10.15407/spqeo18.02.209
PACS 64.70.K-, 78.60.Lc
https://nasplib.isofts.kiev.ua/handle/123456789/121144
In this work, the results of investigations of DLi spectra in α-SiC crystals and films with a low impurity concentration have been presented. Photoluminescence spectra of lightly doped SiC single crystals and films with the impurity concentration of ND–NA ~ (2…8)∙10¹⁶ cm⁻³, ND ~ (5…8)∙10¹⁷ cm⁻³, and ND–NA >3∙10¹⁷ cm⁻³, ND ≥ 1∙10¹⁸ cm⁻³ (NDLsamples) were investigated within the temperature range 4.2…77 K. Complex spectroscopic study of one-dimensional disordered structures caused by solid phase transformations in SiC crystals was presented. Disordered growth D-layers in lightly doped crystals and α-SiC films were investigated using low temperature photoluminescence. The analysis testifies that DL and SF spectra hand-in-hand follow the structure transformations. It has been shown that the DL and SF spectra of luminescence reflect the fundamental logic of SiC polytypes structure. This allows to observe the structure changes at the phase transformations, the growth of SiC polytypes and to control their aggregates.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films
Article
published earlier
spellingShingle Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films
Vlaskina, S.I.
Mishinova, G.N.
Vlaskin, V.I.
Rodionov, V.E.
Svechnikov, G.S.
title Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films
title_full Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films
title_fullStr Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films
title_full_unstemmed Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films
title_short Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films
title_sort structure of photoluminescence dl-spectra and phase transformation in lightly doped sic crystals and films
url https://nasplib.isofts.kiev.ua/handle/123456789/121144
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