Radiation-stimulated processes in silicon structures with contacts based on TiN
The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, t...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2015 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121149 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Radiation-stimulated processes in silicon structures with contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 220-225. — Бібліогр.: 25 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Nasyrov, M.U. Ataubaeva, A.B. 2017-06-13T15:47:06Z 2017-06-13T15:47:06Z 2015 Radiation-stimulated processes in silicon structures with contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 220-225. — Бібліогр.: 25 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.220 PACS 61.80.-x https://nasplib.isofts.kiev.ua/handle/123456789/121149 The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, the grain size reduction with increasing the fluence, the increase of dislocation density and microstrains. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Radiation-stimulated processes in silicon structures with contacts based on TiN Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| spellingShingle |
Radiation-stimulated processes in silicon structures with contacts based on TiN Nasyrov, M.U. Ataubaeva, A.B. |
| title_short |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_full |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_fullStr |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_full_unstemmed |
Radiation-stimulated processes in silicon structures with contacts based on TiN |
| title_sort |
radiation-stimulated processes in silicon structures with contacts based on tin |
| author |
Nasyrov, M.U. Ataubaeva, A.B. |
| author_facet |
Nasyrov, M.U. Ataubaeva, A.B. |
| publishDate |
2015 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, the grain size reduction with increasing the fluence, the increase of dislocation density and microstrains.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121149 |
| citation_txt |
Radiation-stimulated processes in silicon structures with contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 220-225. — Бібліогр.: 25 назв. — англ. |
| work_keys_str_mv |
AT nasyrovmu radiationstimulatedprocessesinsiliconstructureswithcontactsbasedontin AT ataubaevaab radiationstimulatedprocessesinsiliconstructureswithcontactsbasedontin |
| first_indexed |
2025-12-02T01:14:59Z |
| last_indexed |
2025-12-02T01:14:59Z |
| _version_ |
1850861265629478912 |