Radiation-stimulated processes in silicon structures with contacts based on TiN

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2015
• Main Authors: Nasyrov, M.U., Ataubaeva, A.B.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121149
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Radiation-stimulated processes in silicon structures with contacts based on TiN / M.U. Nasyrov, A.B. Ataubaeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 220-225. — Бібліогр.: 25 назв. — англ.

The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, observed are the increase of accumulated damages with decreasing the grain size, t...