Electronic structure of PbSnS₃ and PbGeS₃ semiconductor compounds with the mixed cation coordination

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2015
• Hauptverfasser: Bletskan, M.M., Bletskan, D.I., Kabatsii, V.M.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121155
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Electronic structure of PbSnS₃ and PbGeS₃ semiconductor compounds with the mixed cation coordination / M.M. Bletskan, D.I. Bletskan, V.M. Kabatsii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 12-19. — Бібліогр.: 24 назв. — англ.

The self-consistent band structure calculation of PbSnS₃ and PbGeS₃ ternary compounds with the mixed cation coordination was performed using the ab initio density functional theory method. It has been found that both compounds are indirect-gap semiconductors. The calculated band-gap widths are Egi =...