Light absorption by excited exciton states in layered InSe crystals
We investigated spectra of light absorption by excitons in InSe crystals of different thicknesses, both pure and doped with iron group impurities, at temperatures from 4.5 up to 100 К. It was shown that, along with the traditional direct optical transition (photon → exciton → photon) at k = 0, excit...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2002 |
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121161 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Light absorption by excited exciton states in layered InSe crystals / Yu. I. Zhirko, I.P. Zharkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 156-162. — Бібліогр.: 10 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862725491075579904 |
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| author | Zhirko, Yu.I. Zharkov, I.P. |
| author_facet | Zhirko, Yu.I. Zharkov, I.P. |
| citation_txt | Light absorption by excited exciton states in layered InSe crystals / Yu. I. Zhirko, I.P. Zharkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 156-162. — Бібліогр.: 10 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We investigated spectra of light absorption by excitons in InSe crystals of different thicknesses, both pure and doped with iron group impurities, at temperatures from 4.5 up to 100 К. It was shown that, along with the traditional direct optical transition (photon → exciton → photon) at k = 0, exciton production and annihilation (accompanied with photon emission) occurs also via indirect vertical transition (photon ± phonon → exciton → photon ± phonon) at k ~ 0. For the n = 1 exciton state the direct and indirect vertical transitions were found to be compatible. For excited exciton states these transitions are not compatible; as a result, the integral intensity of absorption bands for excited exciton states, Kn, is over K⁰/n³ (where K⁰ is the classic value for the n = 1 exciton absorption band) and grows with temperature. For the n = 1 exciton state both symmetric and asymmetric (with phonon absorption only) indirect vertical transitions are considered.
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| first_indexed | 2025-12-07T18:52:39Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121161 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T18:52:39Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Zhirko, Yu.I. Zharkov, I.P. 2017-06-13T16:01:32Z 2017-06-13T16:01:32Z 2002 Light absorption by excited exciton states in layered InSe crystals / Yu. I. Zhirko, I.P. Zharkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 156-162. — Бібліогр.: 10 назв. — англ. 1560-8034 PACS: 71.35.Cc, 78.40.Fy, S8.12 https://nasplib.isofts.kiev.ua/handle/123456789/121161 We investigated spectra of light absorption by excitons in InSe crystals of different thicknesses, both pure and doped with iron group impurities, at temperatures from 4.5 up to 100 К. It was shown that, along with the traditional direct optical transition (photon → exciton → photon) at k = 0, exciton production and annihilation (accompanied with photon emission) occurs also via indirect vertical transition (photon ± phonon → exciton → photon ± phonon) at k ~ 0. For the n = 1 exciton state the direct and indirect vertical transitions were found to be compatible. For excited exciton states these transitions are not compatible; as a result, the integral intensity of absorption bands for excited exciton states, Kn, is over K⁰/n³ (where K⁰ is the classic value for the n = 1 exciton absorption band) and grows with temperature. For the n = 1 exciton state both symmetric and asymmetric (with phonon absorption only) indirect vertical transitions are considered. This work was partially supported by the Basic Research Fund of Ukraine (Project No Ф7/310-2001). The authors are greatly indebted to Prof. Yu.P. Gnatenko who made available for them experimental investigations of the lowtemperature spectra of light absorption by excitons in InSe crystals. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Light absorption by excited exciton states in layered InSe crystals Article published earlier |
| spellingShingle | Light absorption by excited exciton states in layered InSe crystals Zhirko, Yu.I. Zharkov, I.P. |
| title | Light absorption by excited exciton states in layered InSe crystals |
| title_full | Light absorption by excited exciton states in layered InSe crystals |
| title_fullStr | Light absorption by excited exciton states in layered InSe crystals |
| title_full_unstemmed | Light absorption by excited exciton states in layered InSe crystals |
| title_short | Light absorption by excited exciton states in layered InSe crystals |
| title_sort | light absorption by excited exciton states in layered inse crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121161 |
| work_keys_str_mv | AT zhirkoyui lightabsorptionbyexcitedexcitonstatesinlayeredinsecrystals AT zharkovip lightabsorptionbyexcitedexcitonstatesinlayeredinsecrystals |