Light absorption by excited exciton states in layered InSe crystals

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2002
• Main Authors: Zhirko, Yu.I., Zharkov, I.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121161
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Light absorption by excited exciton states in layered InSe crystals / Yu. I. Zhirko, I.P. Zharkov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 156-162. — Бібліогр.: 10 назв. — англ.

We investigated spectra of light absorption by excitons in InSe crystals of different thicknesses, both pure and doped with iron group impurities, at temperatures from 4.5 up to 100 К. It was shown that, along with the traditional direct optical transition (photon → exciton → photon) at k = 0, excit...