Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures
We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The obtained parameters of non-ohmic Mott conductivity and their temperature and elect...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121164 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures / Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 400-405. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121164 |
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Shwarts, Yu.M. Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. 2017-06-13T16:09:43Z 2017-06-13T16:09:43Z 2000 Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures / Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 400-405. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 07.07.D, 07.20.D, 61.72.T, 85.30 https://nasplib.isofts.kiev.ua/handle/123456789/121164 We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The obtained parameters of non-ohmic Mott conductivity and their temperature and electric field dependencies enabled us to explain the features in structure thermometric characteristics. It is shown that both height and position of the responsivity peak depend on the extent to which the hopping conductivity is non-ohmic. They are essentially determined by the density of states near the Fermi level. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| spellingShingle |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures Shwarts, Yu.M. Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. |
| title_short |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_full |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_fullStr |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_full_unstemmed |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_sort |
non-ohmic mott conductivity and thermometric characteristics of heavily doped silicon structures |
| author |
Shwarts, Yu.M. Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. |
| author_facet |
Shwarts, Yu.M. Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The obtained parameters of non-ohmic Mott conductivity and their temperature and electric field dependencies enabled us to explain the features in structure thermometric characteristics. It is shown that both height and position of the responsivity peak depend on the extent to which the hopping conductivity is non-ohmic. They are essentially determined by the density of states near the Fermi level.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121164 |
| citation_txt |
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures / Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 400-405. — Бібліогр.: 11 назв. — англ. |
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2025-12-07T15:44:02Z |
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