Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures
We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The obtained parameters of non-ohmic Mott conductivity and their temperature and elect...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121164 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures / Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 400-405. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862679526637568000 |
|---|---|
| author | Shwarts, Yu.M. Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. |
| author_facet | Shwarts, Yu.M. Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. |
| citation_txt | Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures / Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 400-405. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The obtained parameters of non-ohmic Mott conductivity and their temperature and electric field dependencies enabled us to explain the features in structure thermometric characteristics. It is shown that both height and position of the responsivity peak depend on the extent to which the hopping conductivity is non-ohmic. They are essentially determined by the density of states near the Fermi level.
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| first_indexed | 2025-12-07T15:44:02Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121164 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T15:44:02Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Shwarts, Yu.M. Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. 2017-06-13T16:09:43Z 2017-06-13T16:09:43Z 2000 Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures / Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 400-405. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 07.07.D, 07.20.D, 61.72.T, 85.30 https://nasplib.isofts.kiev.ua/handle/123456789/121164 We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The obtained parameters of non-ohmic Mott conductivity and their temperature and electric field dependencies enabled us to explain the features in structure thermometric characteristics. It is shown that both height and position of the responsivity peak depend on the extent to which the hopping conductivity is non-ohmic. They are essentially determined by the density of states near the Fermi level. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures Article published earlier |
| spellingShingle | Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures Shwarts, Yu.M. Kondrachuk, A.V. Shwarts, M.M. Shpinar, L.I. |
| title | Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_full | Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_fullStr | Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_full_unstemmed | Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_short | Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures |
| title_sort | non-ohmic mott conductivity and thermometric characteristics of heavily doped silicon structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121164 |
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