Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2000
• Main Authors: Shwarts, Yu.M., Kondrachuk, A.V., Shwarts, M.M., Shpinar, L.I.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121164
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures / Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 400-405. — Бібліогр.: 11 назв. — англ.

We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The obtained parameters of non-ohmic Mott conductivity and their temperature and elect...