Effect of the charge state of traps on the transport current in the SiC/Si heterostructure
Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described by different mechanisms. Charging the electron traps situated in the SiC laye...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121165 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of the charge state of traps on the transport current in the SiC/Si heterostructure / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 330-337. — Бібліогр.: 19 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862642323862585344 |
|---|---|
| author | Lysenko, V.S. Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. |
| author_facet | Lysenko, V.S. Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. |
| citation_txt | Effect of the charge state of traps on the transport current in the SiC/Si heterostructure / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 330-337. — Бібліогр.: 19 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described by different mechanisms. Charging the electron traps situated in the SiC layer increases the forward current due to reduction of the potential barrier for holes. In the range of forward biases 0.5 – 0.8 V the current is controlled by variable-range hopping of holes in the amorphous SiC according to the Mott's mechanism. At higher voltages the dominant mechanism controlling the current becomes the hole tunneling across the triangular barrier in the amorphous-crystalline semiconductor interface.
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| first_indexed | 2025-12-01T06:32:45Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121165 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T06:32:45Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Lysenko, V.S. Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. 2017-06-13T16:10:21Z 2017-06-13T16:10:21Z 2000 Effect of the charge state of traps on the transport current in the SiC/Si heterostructure / V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 330-337. — Бібліогр.: 19 назв. — англ. 1560-8034 PACS: 73.20.Hb; 73.40.-c; 73.61.Jc. https://nasplib.isofts.kiev.ua/handle/123456789/121165 Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described by different mechanisms. Charging the electron traps situated in the SiC layer increases the forward current due to reduction of the potential barrier for holes. In the range of forward biases 0.5 – 0.8 V the current is controlled by variable-range hopping of holes in the amorphous SiC according to the Mott's mechanism. At higher voltages the dominant mechanism controlling the current becomes the hole tunneling across the triangular barrier in the amorphous-crystalline semiconductor interface. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Effect of the charge state of traps on the transport current in the SiC/Si heterostructure Article published earlier |
| spellingShingle | Effect of the charge state of traps on the transport current in the SiC/Si heterostructure Lysenko, V.S. Tyagulski, I.P. Gomeniuk, Y.V. Osiyuk, I.N. |
| title | Effect of the charge state of traps on the transport current in the SiC/Si heterostructure |
| title_full | Effect of the charge state of traps on the transport current in the SiC/Si heterostructure |
| title_fullStr | Effect of the charge state of traps on the transport current in the SiC/Si heterostructure |
| title_full_unstemmed | Effect of the charge state of traps on the transport current in the SiC/Si heterostructure |
| title_short | Effect of the charge state of traps on the transport current in the SiC/Si heterostructure |
| title_sort | effect of the charge state of traps on the transport current in the sic/si heterostructure |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121165 |
| work_keys_str_mv | AT lysenkovs effectofthechargestateoftrapsonthetransportcurrentinthesicsiheterostructure AT tyagulskiip effectofthechargestateoftrapsonthetransportcurrentinthesicsiheterostructure AT gomeniukyv effectofthechargestateoftrapsonthetransportcurrentinthesicsiheterostructure AT osiyukin effectofthechargestateoftrapsonthetransportcurrentinthesicsiheterostructure |