Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy

Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K...

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Опубліковано в: :Semiconductor Physics Quantum Electronics & Optoelectronics
Дата:2000
Автори: Kladko, V.P., Datsenko, L.I., Maksimenko, Z.V., Lytvyn, O.S., Prokopenko, I.V., Zytkiewicz, Z.
Формат: Стаття
Мова:Англійська
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Онлайн доступ:https://nasplib.isofts.kiev.ua/handle/123456789/121168
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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author Kladko, V.P.
Datsenko, L.I.
Maksimenko, Z.V.
Lytvyn, O.S.
Prokopenko, I.V.
Zytkiewicz, Z.
author_facet Kladko, V.P.
Datsenko, L.I.
Maksimenko, Z.V.
Lytvyn, O.S.
Prokopenko, I.V.
Zytkiewicz, Z.
citation_txt Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ.
collection DSpace DC
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
description Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K-edges of GaAs components.
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language English
last_indexed 2025-12-07T17:13:28Z
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publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
record_format dspace
spelling Kladko, V.P.
Datsenko, L.I.
Maksimenko, Z.V.
Lytvyn, O.S.
Prokopenko, I.V.
Zytkiewicz, Z.
2017-06-13T16:16:49Z
2017-06-13T16:16:49Z
2000
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ.
1560-8034
PACS: 61.10.E, N; 61.72.D; 68.55.L
https://nasplib.isofts.kiev.ua/handle/123456789/121168
Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K-edges of GaAs components.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
Article
published earlier
spellingShingle Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
Kladko, V.P.
Datsenko, L.I.
Maksimenko, Z.V.
Lytvyn, O.S.
Prokopenko, I.V.
Zytkiewicz, Z.
title Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
title_full Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
title_fullStr Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
title_full_unstemmed Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
title_short Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
title_sort structural and composition irregularities in gaas:si/gaas films grown by liquid-phase epitaxy
url https://nasplib.isofts.kiev.ua/handle/123456789/121168
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