Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121168 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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Kladko, V.P. Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. 2017-06-13T16:16:49Z 2017-06-13T16:16:49Z 2000 Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 61.10.E, N; 61.72.D; 68.55.L https://nasplib.isofts.kiev.ua/handle/123456789/121168 Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K-edges of GaAs components. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| spellingShingle |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy Kladko, V.P. Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. |
| title_short |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_full |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_fullStr |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_full_unstemmed |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_sort |
structural and composition irregularities in gaas:si/gaas films grown by liquid-phase epitaxy |
| author |
Kladko, V.P. Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. |
| author_facet |
Kladko, V.P. Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K-edges of GaAs components.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121168 |
| citation_txt |
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ. |
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| first_indexed |
2025-12-07T17:13:28Z |
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2025-12-07T17:13:28Z |
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