Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121168 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862708818255806464 |
|---|---|
| author | Kladko, V.P. Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. |
| author_facet | Kladko, V.P. Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. |
| citation_txt | Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K-edges of GaAs components.
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| first_indexed | 2025-12-07T17:13:28Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121168 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:13:28Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Kladko, V.P. Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. 2017-06-13T16:16:49Z 2017-06-13T16:16:49Z 2000 Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ. 1560-8034 PACS: 61.10.E, N; 61.72.D; 68.55.L https://nasplib.isofts.kiev.ua/handle/123456789/121168 Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K-edges of GaAs components. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy Article published earlier |
| spellingShingle | Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy Kladko, V.P. Datsenko, L.I. Maksimenko, Z.V. Lytvyn, O.S. Prokopenko, I.V. Zytkiewicz, Z. |
| title | Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_full | Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_fullStr | Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_full_unstemmed | Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_short | Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy |
| title_sort | structural and composition irregularities in gaas:si/gaas films grown by liquid-phase epitaxy |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121168 |
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