Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2000
• Hauptverfasser: Kladko, V.P., Datsenko, L.I., Maksimenko, Z.V., Lytvyn, O.S., Prokopenko, I.V., Zytkiewicz, Z.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121168
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy / V.P. Kladko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 343-348. — Бібліогр.: 20 назв. — англ.

Stoichiometry parameters as well as the microdefects ones for GaAs:Si/GaAs thin films grown by liquid-phase epitaxy were investigated by means of method of X-ray integrated reflectivity energy dependencies analysis for quasiforbidden reflections (200) in the interval of wavelengths near absorption K...