Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing
For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General regularities of both radiation absorption and sample heating are considered...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2000 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121170 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing / O.A. Agueev, A.M. Svetlichny, S.I. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 379-382. — Бібліогр.: 15 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862644522272423936 |
|---|---|
| author | Agueev, O.A. Svetlichny, A.M. Soloviev, S.I. |
| author_facet | Agueev, O.A. Svetlichny, A.M. Soloviev, S.I. |
| citation_txt | Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing / O.A. Agueev, A.M. Svetlichny, S.I. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 379-382. — Бібліогр.: 15 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General regularities of both radiation absorption and sample heating are considered. We evaluated various processing modes; one should take this into account when developing technological procedures based on rapid thermal processing for SiC.
|
| first_indexed | 2025-12-01T09:25:14Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121170 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-01T09:25:14Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Agueev, O.A. Svetlichny, A.M. Soloviev, S.I. 2017-06-13T16:22:59Z 2017-06-13T16:22:59Z 2000 Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing / O.A. Agueev, A.M. Svetlichny, S.I. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 379-382. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 42.25.B, 77.84.B, 78.20.C https://nasplib.isofts.kiev.ua/handle/123456789/121170 For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General regularities of both radiation absorption and sample heating are considered. We evaluated various processing modes; one should take this into account when developing technological procedures based on rapid thermal processing for SiC. We are grateful to Prof. U. Lindefelt and Dr. C. Persson who kindly sent us the preprints of their papers. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing Article published earlier |
| spellingShingle | Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing Agueev, O.A. Svetlichny, A.M. Soloviev, S.I. |
| title | Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing |
| title_full | Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing |
| title_fullStr | Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing |
| title_full_unstemmed | Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing |
| title_short | Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing |
| title_sort | simulation of incoherent radiation absorption in 3c-, 6h- and 4h-sic at rapid thermal processing |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121170 |
| work_keys_str_mv | AT agueevoa simulationofincoherentradiationabsorptionin3c6hand4hsicatrapidthermalprocessing AT svetlichnyam simulationofincoherentradiationabsorptionin3c6hand4hsicatrapidthermalprocessing AT solovievsi simulationofincoherentradiationabsorptionin3c6hand4hsicatrapidthermalprocessing |