Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2000
• Hauptverfasser: Agueev, O.A., Svetlichny, A.M., Soloviev, S.I.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121170
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing / O.A. Agueev, A.M. Svetlichny, S.I. Soloviev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 379-382. — Бібліогр.: 15 назв. — англ.

For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General regularities of both radiation absorption and sample heating are considered...