Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride
The method of mass-transfer reaction with compounds NH₄ (Cl, Br, J) as a transроrting agent is developed, and single crystals of semiinsulating CdTe are grown. Interaction of plane-polarized radiation with In-p-CdTe barrier fabricated on these single crystals is investigated. It is shown that at inc...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121171 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride / G.A. Ilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 349-351. — Бібліогр.: 7 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121171 |
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Ilchuk, G.A. 2017-06-13T16:23:50Z 2017-06-13T16:23:50Z 2000 Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride / G.A. Ilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 349-351. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 81.05.Z, 78.20, 73.30 https://nasplib.isofts.kiev.ua/handle/123456789/121171 The method of mass-transfer reaction with compounds NH₄ (Cl, Br, J) as a transроrting agent is developed, and single crystals of semiinsulating CdTe are grown. Interaction of plane-polarized radiation with In-p-CdTe barrier fabricated on these single crystals is investigated. It is shown that at incidence of plane-polarized radiation at incidence angle Q > 0° upon a surface of barrier the induced photopleochroism appears and it is proportional to the angle squared. The conclusions about the high quality both of the single crystals obtained by chemical transport reactions and of the interface of the structures as well as about the possibilities for using such structures as polarimetric analyzers of radiation are made. Author express his gratitude to Professor V.I. Ivanov-Omsky for discussing the result of the studies and critical remarks. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride |
| spellingShingle |
Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride Ilchuk, G.A. |
| title_short |
Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride |
| title_full |
Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride |
| title_fullStr |
Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride |
| title_full_unstemmed |
Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride |
| title_sort |
photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride |
| author |
Ilchuk, G.A. |
| author_facet |
Ilchuk, G.A. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The method of mass-transfer reaction with compounds NH₄ (Cl, Br, J) as a transроrting agent is developed, and single crystals of semiinsulating CdTe are grown. Interaction of plane-polarized radiation with In-p-CdTe barrier fabricated on these single crystals is investigated. It is shown that at incidence of plane-polarized radiation at incidence angle Q > 0° upon a surface of barrier the induced photopleochroism appears and it is proportional to the angle squared. The conclusions about the high quality both of the single crystals obtained by chemical transport reactions and of the interface of the structures as well as about the possibilities for using such structures as polarimetric analyzers of radiation are made.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121171 |
| citation_txt |
Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride / G.A. Ilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 349-351. — Бібліогр.: 7 назв. — англ. |
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2025-12-07T17:48:42Z |
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2025-12-07T17:48:42Z |
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