Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride
The method of mass-transfer reaction with compounds NH₄ (Cl, Br, J) as a transроrting agent is developed, and single crystals of semiinsulating CdTe are grown. Interaction of plane-polarized radiation with In-p-CdTe barrier fabricated on these single crystals is investigated. It is shown that at inc...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2000 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121171 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride / G.A. Ilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 349-351. — Бібліогр.: 7 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862714100924022784 |
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| author | Ilchuk, G.A. |
| author_facet | Ilchuk, G.A. |
| citation_txt | Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride / G.A. Ilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 349-351. — Бібліогр.: 7 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The method of mass-transfer reaction with compounds NH₄ (Cl, Br, J) as a transроrting agent is developed, and single crystals of semiinsulating CdTe are grown. Interaction of plane-polarized radiation with In-p-CdTe barrier fabricated on these single crystals is investigated. It is shown that at incidence of plane-polarized radiation at incidence angle Q > 0° upon a surface of barrier the induced photopleochroism appears and it is proportional to the angle squared. The conclusions about the high quality both of the single crystals obtained by chemical transport reactions and of the interface of the structures as well as about the possibilities for using such structures as polarimetric analyzers of radiation are made.
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| first_indexed | 2025-12-07T17:48:42Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121171 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:48:42Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Ilchuk, G.A. 2017-06-13T16:23:50Z 2017-06-13T16:23:50Z 2000 Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride / G.A. Ilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 349-351. — Бібліогр.: 7 назв. — англ. 1560-8034 PACS 81.05.Z, 78.20, 73.30 https://nasplib.isofts.kiev.ua/handle/123456789/121171 The method of mass-transfer reaction with compounds NH₄ (Cl, Br, J) as a transроrting agent is developed, and single crystals of semiinsulating CdTe are grown. Interaction of plane-polarized radiation with In-p-CdTe barrier fabricated on these single crystals is investigated. It is shown that at incidence of plane-polarized radiation at incidence angle Q > 0° upon a surface of barrier the induced photopleochroism appears and it is proportional to the angle squared. The conclusions about the high quality both of the single crystals obtained by chemical transport reactions and of the interface of the structures as well as about the possibilities for using such structures as polarimetric analyzers of radiation are made. Author express his gratitude to Professor V.I. Ivanov-Omsky for discussing the result of the studies and critical remarks. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride Article published earlier |
| spellingShingle | Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride Ilchuk, G.A. |
| title | Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride |
| title_full | Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride |
| title_fullStr | Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride |
| title_full_unstemmed | Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride |
| title_short | Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride |
| title_sort | photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121171 |
| work_keys_str_mv | AT ilchukga photopleochroismofsurfacebarrierstructuresbasedonsemiinsulatingcadmiumtelluride |