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Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride

The method of mass-transfer reaction with compounds NH₄ (Cl, Br, J) as a transроrting agent is developed, and single crystals of semiinsulating CdTe are grown. Interaction of plane-polarized radiation with In-p-CdTe barrier fabricated on these single crystals is investigated. It is shown that at inc...

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Bibliographic Details
Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2000
Main Author:	Ilchuk, G.A.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/121171
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride / G.A. Ilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 349-351. — Бібліогр.: 7 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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