Comprehensive investigation of defects in highly perfect silicon single crystals
We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and concentrations) for the main types of defects in Czochralski-grown silicon sin...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121174 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Comprehensive investigation of defects in highly perfect silicon single crystals / I.V. Prokopenko, E.N. Kislovskii, S.I. Olikhovskii, V.M. Tkach, P.M. Lytvyn, T.P. Vladimirova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 275-281. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862662134683402240 |
|---|---|
| author | Prokopenko, I.V. Kislovskii, E.N. Olikhovskii, S.I. Tkach, V.M. Lytvyn, P.M. Vladimirova, T.P. |
| author_facet | Prokopenko, I.V. Kislovskii, E.N. Olikhovskii, S.I. Tkach, V.M. Lytvyn, P.M. Vladimirova, T.P. |
| citation_txt | Comprehensive investigation of defects in highly perfect silicon single crystals / I.V. Prokopenko, E.N. Kislovskii, S.I. Olikhovskii, V.M. Tkach, P.M. Lytvyn, T.P. Vladimirova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 275-281. — Бібліогр.: 28 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and concentrations) for the main types of defects in Czochralski-grown silicon single crystals annealed at 750 °С.
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| first_indexed | 2025-12-02T12:51:57Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121174 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T12:51:57Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Prokopenko, I.V. Kislovskii, E.N. Olikhovskii, S.I. Tkach, V.M. Lytvyn, P.M. Vladimirova, T.P. 2017-06-13T16:25:38Z 2017-06-13T16:25:38Z 2000 Comprehensive investigation of defects in highly perfect silicon single crystals / I.V. Prokopenko, E.N. Kislovskii, S.I. Olikhovskii, V.M. Tkach, P.M. Lytvyn, T.P. Vladimirova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 275-281. — Бібліогр.: 28 назв. — англ. 1560-8034 PACS 61.10.Eq; 61.71.Ff, 61.72.Ji, 61.72.Nn, 61.72.Qq https://nasplib.isofts.kiev.ua/handle/123456789/121174 We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and concentrations) for the main types of defects in Czochralski-grown silicon single crystals annealed at 750 °С. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Comprehensive investigation of defects in highly perfect silicon single crystals Article published earlier |
| spellingShingle | Comprehensive investigation of defects in highly perfect silicon single crystals Prokopenko, I.V. Kislovskii, E.N. Olikhovskii, S.I. Tkach, V.M. Lytvyn, P.M. Vladimirova, T.P. |
| title | Comprehensive investigation of defects in highly perfect silicon single crystals |
| title_full | Comprehensive investigation of defects in highly perfect silicon single crystals |
| title_fullStr | Comprehensive investigation of defects in highly perfect silicon single crystals |
| title_full_unstemmed | Comprehensive investigation of defects in highly perfect silicon single crystals |
| title_short | Comprehensive investigation of defects in highly perfect silicon single crystals |
| title_sort | comprehensive investigation of defects in highly perfect silicon single crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121174 |
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