Comprehensive investigation of defects in highly perfect silicon single crystals

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2000
• Main Authors: Prokopenko, I.V., Kislovskii, E.N., Olikhovskii, S.I., Tkach, V.M., Lytvyn, P.M., Vladimirova, T.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121174
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Comprehensive investigation of defects in highly perfect silicon single crystals / I.V. Prokopenko, E.N. Kislovskii, S.I. Olikhovskii, V.M. Tkach, P.M. Lytvyn, T.P. Vladimirova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 275-281. — Бібліогр.: 28 назв. — англ.

We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and concentrations) for the main types of defects in Czochralski-grown silicon sin...