Comprehensive investigation of defects in highly perfect silicon single crystals

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2000
• Hauptverfasser: Prokopenko, I.V., Kislovskii, E.N., Olikhovskii, S.I., Tkach, V.M., Lytvyn, P.M., Vladimirova, T.P.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121174
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Comprehensive investigation of defects in highly perfect silicon single crystals / I.V. Prokopenko, E.N. Kislovskii, S.I. Olikhovskii, V.M. Tkach, P.M. Lytvyn, T.P. Vladimirova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 275-281. — Бібліогр.: 28 назв. — англ.

We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and concentrations) for the main types of defects in Czochralski-grown silicon sin...