About the nature of diffusion anisotropy in CdS crystals

Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction being more than one order faster as compared with its diffusion in parallel t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2000
Hauptverfasser: Borkovskaya, L.V., Dzhumaev, B.R., Khomenkova, L.Yu., Korsunskaya, N.E., Markevich, I.V., Sheinkman, M.K.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121175
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:About the nature of diffusion anisotropy in CdS crystals / L.V. Borkovskaya, B.R.Dzhumaev, L.Yu. Khomenkova, N.E. Korsunskaya, I.V. Markevich, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 282-286. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine
Beschreibung
Zusammenfassung:Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction being more than one order faster as compared with its diffusion in parallel to the c-axis direction. The effect has been shown to be not due to greater density of perpendicular to the c-axis dislocations than that of parallel to the c-axis ones, as it was thought earlier. Electrically active dislocations lying in the basal plane are supposed to be channels of fast diffusion owing to their intensive decoration with intrinsic defects and residual impurities.
ISSN:1560-8034