About the nature of diffusion anisotropy in CdS crystals
Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction being more than one order faster as compared with its diffusion in parallel t...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121175 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | About the nature of diffusion anisotropy in CdS crystals / L.V. Borkovskaya, B.R.Dzhumaev, L.Yu. Khomenkova, N.E. Korsunskaya, I.V. Markevich, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 282-286. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862710588501655552 |
|---|---|
| author | Borkovskaya, L.V. Dzhumaev, B.R. Khomenkova, L.Yu. Korsunskaya, N.E. Markevich, I.V. Sheinkman, M.K. |
| author_facet | Borkovskaya, L.V. Dzhumaev, B.R. Khomenkova, L.Yu. Korsunskaya, N.E. Markevich, I.V. Sheinkman, M.K. |
| citation_txt | About the nature of diffusion anisotropy in CdS crystals / L.V. Borkovskaya, B.R.Dzhumaev, L.Yu. Khomenkova, N.E. Korsunskaya, I.V. Markevich, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 282-286. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction being more than one order faster as compared with its diffusion in parallel to the c-axis direction. The effect has been shown to be not due to greater density of perpendicular to the c-axis dislocations than that of parallel to the c-axis ones, as it was thought earlier. Electrically active dislocations lying in the basal plane are supposed to be channels of fast diffusion owing to their intensive decoration with intrinsic defects and residual impurities.
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| first_indexed | 2025-12-07T17:24:59Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121175 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:24:59Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Borkovskaya, L.V. Dzhumaev, B.R. Khomenkova, L.Yu. Korsunskaya, N.E. Markevich, I.V. Sheinkman, M.K. 2017-06-13T16:29:17Z 2017-06-13T16:29:17Z 2000 About the nature of diffusion anisotropy in CdS crystals / L.V. Borkovskaya, B.R.Dzhumaev, L.Yu. Khomenkova, N.E. Korsunskaya, I.V. Markevich, M.K. Sheinkman // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 282-286. — англ. 1560-8034 PACS 66.30.Jt, 66.30.Qa, 61.72.Vv, 61.72.Ff, 61.72.Yx https://nasplib.isofts.kiev.ua/handle/123456789/121175 Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction being more than one order faster as compared with its diffusion in parallel to the c-axis direction. The effect has been shown to be not due to greater density of perpendicular to the c-axis dislocations than that of parallel to the c-axis ones, as it was thought earlier. Electrically active dislocations lying in the basal plane are supposed to be channels of fast diffusion owing to their intensive decoration with intrinsic defects and residual impurities. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics About the nature of diffusion anisotropy in CdS crystals Article published earlier |
| spellingShingle | About the nature of diffusion anisotropy in CdS crystals Borkovskaya, L.V. Dzhumaev, B.R. Khomenkova, L.Yu. Korsunskaya, N.E. Markevich, I.V. Sheinkman, M.K. |
| title | About the nature of diffusion anisotropy in CdS crystals |
| title_full | About the nature of diffusion anisotropy in CdS crystals |
| title_fullStr | About the nature of diffusion anisotropy in CdS crystals |
| title_full_unstemmed | About the nature of diffusion anisotropy in CdS crystals |
| title_short | About the nature of diffusion anisotropy in CdS crystals |
| title_sort | about the nature of diffusion anisotropy in cds crystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121175 |
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