Thermoelectric properties of solid solutions based on tin telluride

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2000
• Hauptverfasser: Freik, D.M., Galushchak, M.O., Ivanishin, I.M., Shperun, V.M., Zapukhlyak, R.I., Pyts, M.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121176
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Thermoelectric properties of solid solutions based on tin telluride / D.M. Freik, M.O. Galushchak, I.M. Ivanishin, V.M. Shperun, R.I. Zapukhlyak, M.V. Pyts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 287-290. — Бібліогр.: 7 назв. — англ.

The relation of a thermoelectric parameters of the solid solutions based on tin telluride: SnTe-MnTe, SnTe-Cu₂Te and SnTe-In₂Te₃: Pb versus an amount of dopant impurity are investigated. The crystaloquasichemical mechanism of the solid solutions formation are proposed. Showed is that at the expense...