Buchumschlag

Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors

The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns of specimens. An appearance of additional tensoeffect mechanisms after the LTP d...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2000
Hauptverfasser: Venger, Ye.F., Kolomoets, V.V., Machulin, V.F.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121177
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors / Ye.F. Venger, V.V. Kolomoets, V.F. Machulin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 291-294. — Бібліогр.: 10 назв. — англ.

Institution

Digital Library of Periodicals of National Academy of Sciences of Ukraine

Ähnliche Einträge

Ähnliche Einträge