Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2000
• Main Authors: Venger, Ye.F., Kolomoets, V.V., Machulin, V.F.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121177
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors / Ye.F. Venger, V.V. Kolomoets, V.F. Machulin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 291-294. — Бібліогр.: 10 назв. — англ.

The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns of specimens. An appearance of additional tensoeffect mechanisms after the LTP d...