Photoluminescent films of nanocrystalline silicon doped with metals

Effects of electropositive (Au, Ag, Cu) and electronegative (Al, In) metal impurities are investigated from the viewpoint of photoluminescent and electronic properties of nanocrystalline silicon films prepared by laser ablation when depositing them onto a silicon substrate. Measured are time-resolve...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2002
Hauptverfasser: Kaganovich, E.B., Kirillova, S.I., Manoilov, E.G., Primachenko, V.E., Svechnikov, S.V., Venger, E.F., Bazylyuk, I.R.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121181
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Photoluminescent films of nanocrystalline silicon doped with metals / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov, E.F. Venger, I.R. Bazylyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 125-132. — Бібліогр.: 23 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121181
record_format dspace
spelling Kaganovich, E.B.
Kirillova, S.I.
Manoilov, E.G.
Primachenko, V.E.
Svechnikov, S.V.
Venger, E.F.
Bazylyuk, I.R.
2017-06-13T16:33:58Z
2017-06-13T16:33:58Z
2002
Photoluminescent films of nanocrystalline silicon doped with metals / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov, E.F. Venger, I.R. Bazylyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 125-132. — Бібліогр.: 23 назв. — англ.
1560-8034
PACS: 78.47.+p, 78.55.A, 78.67.Bf
https://nasplib.isofts.kiev.ua/handle/123456789/121181
Effects of electropositive (Au, Ag, Cu) and electronegative (Al, In) metal impurities are investigated from the viewpoint of photoluminescent and electronic properties of nanocrystalline silicon films prepared by laser ablation when depositing them onto a silicon substrate. Measured are time-resolved photoluminescence e. It was ascertained that only Au could essentially increase intensity and stability of photoluminescence, increase its relaxation time by three orders of magnitude as well as decrease the density of states near the film-substrate boundary. It has been shown that the metal impurities provide an essential effect on photovoltage arising in films of nanocrystalline Si as well as the capture of non-equilibrium electrons by traps both in films themselves and at the substrate boundary.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Photoluminescent films of nanocrystalline silicon doped with metals
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Photoluminescent films of nanocrystalline silicon doped with metals
spellingShingle Photoluminescent films of nanocrystalline silicon doped with metals
Kaganovich, E.B.
Kirillova, S.I.
Manoilov, E.G.
Primachenko, V.E.
Svechnikov, S.V.
Venger, E.F.
Bazylyuk, I.R.
title_short Photoluminescent films of nanocrystalline silicon doped with metals
title_full Photoluminescent films of nanocrystalline silicon doped with metals
title_fullStr Photoluminescent films of nanocrystalline silicon doped with metals
title_full_unstemmed Photoluminescent films of nanocrystalline silicon doped with metals
title_sort photoluminescent films of nanocrystalline silicon doped with metals
author Kaganovich, E.B.
Kirillova, S.I.
Manoilov, E.G.
Primachenko, V.E.
Svechnikov, S.V.
Venger, E.F.
Bazylyuk, I.R.
author_facet Kaganovich, E.B.
Kirillova, S.I.
Manoilov, E.G.
Primachenko, V.E.
Svechnikov, S.V.
Venger, E.F.
Bazylyuk, I.R.
publishDate 2002
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Effects of electropositive (Au, Ag, Cu) and electronegative (Al, In) metal impurities are investigated from the viewpoint of photoluminescent and electronic properties of nanocrystalline silicon films prepared by laser ablation when depositing them onto a silicon substrate. Measured are time-resolved photoluminescence e. It was ascertained that only Au could essentially increase intensity and stability of photoluminescence, increase its relaxation time by three orders of magnitude as well as decrease the density of states near the film-substrate boundary. It has been shown that the metal impurities provide an essential effect on photovoltage arising in films of nanocrystalline Si as well as the capture of non-equilibrium electrons by traps both in films themselves and at the substrate boundary.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121181
citation_txt Photoluminescent films of nanocrystalline silicon doped with metals / E.B. Kaganovich, S.I. Kirillova, E.G. Manoilov, V.E. Primachenko, S.V. Svechnikov, E.F. Venger, I.R. Bazylyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 125-132. — Бібліогр.: 23 назв. — англ.
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AT primachenkove photoluminescentfilmsofnanocrystallinesilicondopedwithmetals
AT svechnikovsv photoluminescentfilmsofnanocrystallinesilicondopedwithmetals
AT vengeref photoluminescentfilmsofnanocrystallinesilicondopedwithmetals
AT bazylyukir photoluminescentfilmsofnanocrystallinesilicondopedwithmetals
first_indexed 2025-12-02T05:37:32Z
last_indexed 2025-12-02T05:37:32Z
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