Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers

Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers

Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. It was found that the epilayers with thicknesses above some value (>1 μm...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2002
Hauptverfasser: Semenova, G.N., Venger, E.F., Korsunska, N.O., Klad’ko, V.P., Borkovska, L.V., Semtsiv, M.P., Sharibaev, M.B., Kushnirenko, V.I., Sadofyev, Yu.G.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121182
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers / G.N. Semenova, E.F. Venger, N.O. Korsunska, V.P. Klad’ko, L.V. Borkovska, M.P. Semtsiv, M.B. Sharibaev, V.I. Kushnirenko, Yu.G. Sadofyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 133-137. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121182
record_format dspace
spelling Semenova, G.N.
Venger, E.F.
Korsunska, N.O.
Klad’ko, V.P.
Borkovska, L.V.
Semtsiv, M.P.
Sharibaev, M.B.
Kushnirenko, V.I.
Sadofyev, Yu.G.
2017-06-13T16:35:17Z
2017-06-13T16:35:17Z
2002
Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers / G.N. Semenova, E.F. Venger, N.O. Korsunska, V.P. Klad’ko, L.V. Borkovska, M.P. Semtsiv, M.B. Sharibaev, V.I. Kushnirenko, Yu.G. Sadofyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 133-137. — Бібліогр.: 13 назв. — англ.
1560-8034
PACS: 66.30.Jt, 66.30.Qa, 61.72.Vv, 61.72.Ff, 61.72.Yx
https://nasplib.isofts.kiev.ua/handle/123456789/121182
Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. It was found that the epilayers with thicknesses above some value (>1 μm) contain three regions of different structural and optical quality. It is shown that two of these regions (near top surface and near interface ones) contain higher defect density. The nature of luminescence line at 446.1nm (4.2 K) is discussed. It was found that the radiation enhanced defect reactions occurred in the top surface region of epilayer.
It is a pleasure to acknowledge Dr I.А. Mazarchuk for sample etching.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
spellingShingle Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
Semenova, G.N.
Venger, E.F.
Korsunska, N.O.
Klad’ko, V.P.
Borkovska, L.V.
Semtsiv, M.P.
Sharibaev, M.B.
Kushnirenko, V.I.
Sadofyev, Yu.G.
title_short Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
title_full Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
title_fullStr Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
title_full_unstemmed Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
title_sort defects and radiation-enhanced defect reactions in znse/(001)gaas mbe layers
author Semenova, G.N.
Venger, E.F.
Korsunska, N.O.
Klad’ko, V.P.
Borkovska, L.V.
Semtsiv, M.P.
Sharibaev, M.B.
Kushnirenko, V.I.
Sadofyev, Yu.G.
author_facet Semenova, G.N.
Venger, E.F.
Korsunska, N.O.
Klad’ko, V.P.
Borkovska, L.V.
Semtsiv, M.P.
Sharibaev, M.B.
Kushnirenko, V.I.
Sadofyev, Yu.G.
publishDate 2002
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. It was found that the epilayers with thicknesses above some value (>1 μm) contain three regions of different structural and optical quality. It is shown that two of these regions (near top surface and near interface ones) contain higher defect density. The nature of luminescence line at 446.1nm (4.2 K) is discussed. It was found that the radiation enhanced defect reactions occurred in the top surface region of epilayer.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121182
citation_txt Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers / G.N. Semenova, E.F. Venger, N.O. Korsunska, V.P. Klad’ko, L.V. Borkovska, M.P. Semtsiv, M.B. Sharibaev, V.I. Kushnirenko, Yu.G. Sadofyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 133-137. — Бібліогр.: 13 назв. — англ.
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first_indexed 2025-12-02T11:55:12Z
last_indexed 2025-12-02T11:55:12Z
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