Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. It was found that the epilayers with thicknesses above some value (>1 μm...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2002 |
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121182 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers / G.N. Semenova, E.F. Venger, N.O. Korsunska, V.P. Klad’ko, L.V. Borkovska, M.P. Semtsiv, M.B. Sharibaev, V.I. Kushnirenko, Yu.G. Sadofyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 133-137. — Бібліогр.: 13 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862661533183508480 |
|---|---|
| author | Semenova, G.N. Venger, E.F. Korsunska, N.O. Klad’ko, V.P. Borkovska, L.V. Semtsiv, M.P. Sharibaev, M.B. Kushnirenko, V.I. Sadofyev, Yu.G. |
| author_facet | Semenova, G.N. Venger, E.F. Korsunska, N.O. Klad’ko, V.P. Borkovska, L.V. Semtsiv, M.P. Sharibaev, M.B. Kushnirenko, V.I. Sadofyev, Yu.G. |
| citation_txt | Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers / G.N. Semenova, E.F. Venger, N.O. Korsunska, V.P. Klad’ko, L.V. Borkovska, M.P. Semtsiv, M.B. Sharibaev, V.I. Kushnirenko, Yu.G. Sadofyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 133-137. — Бібліогр.: 13 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. It was found that the epilayers with thicknesses above some value (>1 μm) contain three regions of different structural and optical quality. It is shown that two of these regions (near top surface and near interface ones) contain higher defect density. The nature of luminescence line at 446.1nm (4.2 K) is discussed. It was found that the radiation enhanced defect reactions occurred in the top surface region of epilayer.
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| first_indexed | 2025-12-02T11:55:12Z |
| format | Article |
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| id | nasplib_isofts_kiev_ua-123456789-121182 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-02T11:55:12Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Semenova, G.N. Venger, E.F. Korsunska, N.O. Klad’ko, V.P. Borkovska, L.V. Semtsiv, M.P. Sharibaev, M.B. Kushnirenko, V.I. Sadofyev, Yu.G. 2017-06-13T16:35:17Z 2017-06-13T16:35:17Z 2002 Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers / G.N. Semenova, E.F. Venger, N.O. Korsunska, V.P. Klad’ko, L.V. Borkovska, M.P. Semtsiv, M.B. Sharibaev, V.I. Kushnirenko, Yu.G. Sadofyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 133-137. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 66.30.Jt, 66.30.Qa, 61.72.Vv, 61.72.Ff, 61.72.Yx https://nasplib.isofts.kiev.ua/handle/123456789/121182 Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. It was found that the epilayers with thicknesses above some value (>1 μm) contain three regions of different structural and optical quality. It is shown that two of these regions (near top surface and near interface ones) contain higher defect density. The nature of luminescence line at 446.1nm (4.2 K) is discussed. It was found that the radiation enhanced defect reactions occurred in the top surface region of epilayer. It is a pleasure to acknowledge Dr I.А. Mazarchuk for sample etching. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers Article published earlier |
| spellingShingle | Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers Semenova, G.N. Venger, E.F. Korsunska, N.O. Klad’ko, V.P. Borkovska, L.V. Semtsiv, M.P. Sharibaev, M.B. Kushnirenko, V.I. Sadofyev, Yu.G. |
| title | Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers |
| title_full | Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers |
| title_fullStr | Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers |
| title_full_unstemmed | Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers |
| title_short | Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers |
| title_sort | defects and radiation-enhanced defect reactions in znse/(001)gaas mbe layers |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121182 |
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