Influence of ion implantation and annealing on composition and structure of GaAs surface
In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba⁺ ions implantation on the structure of GaAs surface was investigated using photoelec...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2002 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121184 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Influence of ion implantation and annealing on composition and structure of GaAs surface / M.T. Normuradov, B.E. Umirzakov, D.A. Tashmukhamedova, A.K. Tashatov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 138-141. — Бібліогр.: 9 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862580181074444288 |
|---|---|
| author | Normuradov, M.T. Umirzakov, B.E. Tashmukhamedova, D.A. Tashatov, A.K. |
| author_facet | Normuradov, M.T. Umirzakov, B.E. Tashmukhamedova, D.A. Tashatov, A.K. |
| citation_txt | Influence of ion implantation and annealing on composition and structure of GaAs surface / M.T. Normuradov, B.E. Umirzakov, D.A. Tashmukhamedova, A.K. Tashatov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 138-141. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba⁺ ions implantation on the structure of GaAs surface was investigated using photoelectron spectroscopy. Determined are parameters of energy bands and the crystalline lattice of the three-component system Ga₀.₆Ba₀.₄As. The width of the forbidden gap is Eg = 1 eV, the lattice constant is a = 5.73 Å.
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| first_indexed | 2025-11-26T20:20:49Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121184 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-26T20:20:49Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Normuradov, M.T. Umirzakov, B.E. Tashmukhamedova, D.A. Tashatov, A.K. 2017-06-13T16:39:22Z 2017-06-13T16:39:22Z 2002 Influence of ion implantation and annealing on composition and structure of GaAs surface / M.T. Normuradov, B.E. Umirzakov, D.A. Tashmukhamedova, A.K. Tashatov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 138-141. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 61.72.V, 61.80.-x, 79.60.-i https://nasplib.isofts.kiev.ua/handle/123456789/121184 In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba⁺ ions implantation on the structure of GaAs surface was investigated using photoelectron spectroscopy. Determined are parameters of energy bands and the crystalline lattice of the three-component system Ga₀.₆Ba₀.₄As. The width of the forbidden gap is Eg = 1 eV, the lattice constant is a = 5.73 Å. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Influence of ion implantation and annealing on composition and structure of GaAs surface Article published earlier |
| spellingShingle | Influence of ion implantation and annealing on composition and structure of GaAs surface Normuradov, M.T. Umirzakov, B.E. Tashmukhamedova, D.A. Tashatov, A.K. |
| title | Influence of ion implantation and annealing on composition and structure of GaAs surface |
| title_full | Influence of ion implantation and annealing on composition and structure of GaAs surface |
| title_fullStr | Influence of ion implantation and annealing on composition and structure of GaAs surface |
| title_full_unstemmed | Influence of ion implantation and annealing on composition and structure of GaAs surface |
| title_short | Influence of ion implantation and annealing on composition and structure of GaAs surface |
| title_sort | influence of ion implantation and annealing on composition and structure of gaas surface |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121184 |
| work_keys_str_mv | AT normuradovmt influenceofionimplantationandannealingoncompositionandstructureofgaassurface AT umirzakovbe influenceofionimplantationandannealingoncompositionandstructureofgaassurface AT tashmukhamedovada influenceofionimplantationandannealingoncompositionandstructureofgaassurface AT tashatovak influenceofionimplantationandannealingoncompositionandstructureofgaassurface |