Influence of ion implantation and annealing on composition and structure of GaAs surface

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2002
• Hauptverfasser: Normuradov, M.T., Umirzakov, B.E., Tashmukhamedova, D.A., Tashatov, A.K.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121184
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Influence of ion implantation and annealing on composition and structure of GaAs surface / M.T. Normuradov, B.E. Umirzakov, D.A. Tashmukhamedova, A.K. Tashatov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 138-141. — Бібліогр.: 9 назв. — англ.

In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba⁺ ions implantation on the structure of GaAs surface was investigated using photoelec...