The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2002
• Main Authors: Ahmad, I., Omar, A., Mikdad, A.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121185
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices / I. Ahmad, A. Omar, A. Mikdad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 188-192. — Бібліогр.: 14 назв. — англ.

Two doping methods for introducing phosphorus atoms into polysilicon to form a gate electrode for 0.5 mm CMOS were investigated. These methods were ion implantation and the ”in-situ” one (it is also known as thermal diffusion). For the in-situ method, the concentration of 1.8.10²⁰cm-³ for Si₂H₆ and...