The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices
Two doping methods for introducing phosphorus atoms into polysilicon to form a gate electrode for 0.5 mm CMOS were investigated. These methods were ion implantation and the ”in-situ” one (it is also known as thermal diffusion). For the in-situ method, the concentration of 1.8.10²⁰cm-³ for Si₂H₆ and...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2002 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121185 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices / I. Ahmad, A. Omar, A. Mikdad // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 188-192. — Бібліогр.: 14 назв. — англ. |