Mechanism of 6H-3C transformation in SiC

Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation have been studied. Calculated nitrogen concentration from the Hall eff...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2002
Main Author: Vlaskina, S.I.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121188
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Mechanism of 6H-3C transformation in SiC / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 152-155. — Бібліогр.: 5 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121188
record_format dspace
spelling Vlaskina, S.I.
2017-06-13T16:42:21Z
2017-06-13T16:42:21Z
2002
Mechanism of 6H-3C transformation in SiC / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 152-155. — Бібліогр.: 5 назв. — англ.
1560-8034
PACS: 77.84.B
https://nasplib.isofts.kiev.ua/handle/123456789/121188
Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation have been studied. Calculated nitrogen concentration from the Hall effect and EPR spectra for transformed crystals show its decreasing value in 3C-SiC. Data show appearance of new defects - donors and acceptors - that make nitrogen optically and electrically non-active. These defects accompany the process of transformation.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Mechanism of 6H-3C transformation in SiC
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Mechanism of 6H-3C transformation in SiC
spellingShingle Mechanism of 6H-3C transformation in SiC
Vlaskina, S.I.
title_short Mechanism of 6H-3C transformation in SiC
title_full Mechanism of 6H-3C transformation in SiC
title_fullStr Mechanism of 6H-3C transformation in SiC
title_full_unstemmed Mechanism of 6H-3C transformation in SiC
title_sort mechanism of 6h-3c transformation in sic
author Vlaskina, S.I.
author_facet Vlaskina, S.I.
publishDate 2002
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation have been studied. Calculated nitrogen concentration from the Hall effect and EPR spectra for transformed crystals show its decreasing value in 3C-SiC. Data show appearance of new defects - donors and acceptors - that make nitrogen optically and electrically non-active. These defects accompany the process of transformation.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121188
citation_txt Mechanism of 6H-3C transformation in SiC / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 152-155. — Бібліогр.: 5 назв. — англ.
work_keys_str_mv AT vlaskinasi mechanismof6h3ctransformationinsic
first_indexed 2025-12-07T13:24:30Z
last_indexed 2025-12-07T13:24:30Z
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