Mechanism of 6H-3C transformation in SiC
Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation have been studied. Calculated nitrogen concentration from the Hall eff...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2002 |
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| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121188 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Mechanism of 6H-3C transformation in SiC / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 152-155. — Бібліогр.: 5 назв. — англ. |
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Vlaskina, S.I. 2017-06-13T16:42:21Z 2017-06-13T16:42:21Z 2002 Mechanism of 6H-3C transformation in SiC / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 152-155. — Бібліогр.: 5 назв. — англ. 1560-8034 PACS: 77.84.B https://nasplib.isofts.kiev.ua/handle/123456789/121188 Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation have been studied. Calculated nitrogen concentration from the Hall effect and EPR spectra for transformed crystals show its decreasing value in 3C-SiC. Data show appearance of new defects - donors and acceptors - that make nitrogen optically and electrically non-active. These defects accompany the process of transformation. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Mechanism of 6H-3C transformation in SiC Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Mechanism of 6H-3C transformation in SiC |
| spellingShingle |
Mechanism of 6H-3C transformation in SiC Vlaskina, S.I. |
| title_short |
Mechanism of 6H-3C transformation in SiC |
| title_full |
Mechanism of 6H-3C transformation in SiC |
| title_fullStr |
Mechanism of 6H-3C transformation in SiC |
| title_full_unstemmed |
Mechanism of 6H-3C transformation in SiC |
| title_sort |
mechanism of 6h-3c transformation in sic |
| author |
Vlaskina, S.I. |
| author_facet |
Vlaskina, S.I. |
| publishDate |
2002 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation have been studied. Calculated nitrogen concentration from the Hall effect and EPR spectra for transformed crystals show its decreasing value in 3C-SiC. Data show appearance of new defects - donors and acceptors - that make nitrogen optically and electrically non-active. These defects accompany the process of transformation.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121188 |
| citation_txt |
Mechanism of 6H-3C transformation in SiC / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 152-155. — Бібліогр.: 5 назв. — англ. |
| work_keys_str_mv |
AT vlaskinasi mechanismof6h3ctransformationinsic |
| first_indexed |
2025-12-07T13:24:30Z |
| last_indexed |
2025-12-07T13:24:30Z |
| _version_ |
1850856041480192000 |