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Mechanism of 6H-3C transformation in SiC

Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation have been studied. Calculated nitrogen concentration from the Hall eff...

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Bibliographic Details
Published in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Date:	2002
Main Author:	Vlaskina, S.I.
Format:	Article
Language:	English
Published:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Online Access:	https://nasplib.isofts.kiev.ua/handle/123456789/121188
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Journal Title:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:	Mechanism of 6H-3C transformation in SiC / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 152-155. — Бібліогр.: 5 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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