Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures
The work deals with study and optimization of the technological parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front penetration into semiconductor is the main factor that determines ohmic properties of contact junctions.
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2002 |
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121191 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures / R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 180-182. — Бібліогр.: 9 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862616725429682176 |
|---|---|
| author | Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. |
| author_facet | Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. |
| citation_txt | Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures / R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 180-182. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | The work deals with study and optimization of the technological parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front penetration into semiconductor is the main factor that determines ohmic properties of contact junctions.
|
| first_indexed | 2025-12-07T13:10:01Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121191 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:10:01Z |
| publishDate | 2002 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. 2017-06-13T16:43:48Z 2017-06-13T16:43:48Z 2002 Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures / R.V. Konakova, V.V. Milenin, M.A. Stovpovoi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 180-182. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 73.40.K, 73.40.C https://nasplib.isofts.kiev.ua/handle/123456789/121191 The work deals with study and optimization of the technological parameters of ohmic contacts for HEMTs. It is shown that the depth of fusion front penetration into semiconductor is the main factor that determines ohmic properties of contact junctions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures Article published earlier |
| spellingShingle | Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures Konakova, R.V. Milenin, V.V. Stovpovoi, M.A. |
| title | Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures |
| title_full | Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures |
| title_fullStr | Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures |
| title_full_unstemmed | Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures |
| title_short | Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures |
| title_sort | optimization of technological parameters of ohmic contact junctions for gaas-algaas-based transistor structures |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121191 |
| work_keys_str_mv | AT konakovarv optimizationoftechnologicalparametersofohmiccontactjunctionsforgaasalgaasbasedtransistorstructures AT mileninvv optimizationoftechnologicalparametersofohmiccontactjunctionsforgaasalgaasbasedtransistorstructures AT stovpovoima optimizationoftechnologicalparametersofohmiccontactjunctionsforgaasalgaasbasedtransistorstructures |