Effect of nonuniform doping profile on thermometric performance of diode temperature sensors

A theoretical investigation of the influence of a nonuniform doping concentration to the temperature response curve of diode temperature sensors is presented, which is the first effort in this field important for diffused diodes used as the temperature sensors. The current-voltage characteristic, fr...

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Veröffentlicht in:	Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:	2002
Hauptverfasser:	Sokolov, V.N., Shwarts, Yu.M.
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Online Zugang:	https://nasplib.isofts.kiev.ua/handle/123456789/121193
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:	Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:	Effect of nonuniform doping profile on thermometric performance of diode temperature sensors / V.N. Sokolov, Yu.М. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 201-211. — Бібліогр.: 25 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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