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Effect of nonuniform doping profile on thermometric performance of diode temperature sensors

A theoretical investigation of the influence of a nonuniform doping concentration to the temperature response curve of diode temperature sensors is presented, which is the first effort in this field important for diffused diodes used as the temperature sensors. The current-voltage characteristic, fr...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2002
Main Authors: Sokolov, V.N., Shwarts, Yu.M.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121193
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Effect of nonuniform doping profile on thermometric performance of diode temperature sensors / V.N. Sokolov, Yu.М. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 201-211. — Бібліогр.: 25 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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