Composition and concentration dependences of electron mobility in semi-metal Hg₁₋xCdxTe quantum wells

Modeled in this work is the electron mobility in the n-type Hg⁰.³²Cd⁰.⁶⁸Te/Hg₁₋xCdxTe/Hg⁰.³²Cd⁰.⁶⁸Te quantum well being in the semi-metal state at T = 77 K. Calculations take into account longitudinal polar optical phonon scattering, charged impurities scattering and electron-hole scattering. The Bo...

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Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2015
Main Authors: Melezhik, E.O., Gumenjuk-Sichevsk, J.V., Sizov, F.F.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121200
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:Composition and concentration dependences of electron mobility in semi-metal Hg₁₋xCdxTe quantum wells / E.O. Melezhik, J.V. Gumenjuk-Sichevska, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 297-301. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine