Polarization properties of the luminescence from silicon nanocrystals
Polarization dependent photoluminescence (PL), time-resolved PL and PL excitation experiments are performed in order to clarify the origin of the linear polarization of the PL of porous silicon excited by linear polarized light. It is shown that this effect, when PL is excited significantly above th...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Englisch |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121201 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Polarization properties of the luminescence from silicon nanocrystals / J. Diener, D. Kovalev, G. Polisski, F. Koch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 445-448. — Бібліогр.: 11 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862604413007298560 |
|---|---|
| author | Diener, J. Kovalev, D. Polisski, G. Koch, F. |
| author_facet | Diener, J. Kovalev, D. Polisski, G. Koch, F. |
| citation_txt | Polarization properties of the luminescence from silicon nanocrystals / J. Diener, D. Kovalev, G. Polisski, F. Koch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 445-448. — Бібліогр.: 11 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Polarization dependent photoluminescence (PL), time-resolved PL and PL excitation experiments are performed in order to clarify the origin of the linear polarization of the PL of porous silicon excited by linear polarized light. It is shown that this effect, when PL is excited significantly above the detection energy, is not related to a coherent exciton alignment or selective optical excitation of those nanocrystals whose transition dipole moments are oriented parallel to the polarization vector of the exciting light. The experimental results are interpreted in the framework of a dielectric model assuming aspheric nanocrystals.
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| first_indexed | 2025-11-28T09:25:10Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121201 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-28T09:25:10Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Diener, J. Kovalev, D. Polisski, G. Koch, F. 2017-06-13T16:48:28Z 2017-06-13T16:48:28Z 2000 Polarization properties of the luminescence from silicon nanocrystals / J. Diener, D. Kovalev, G. Polisski, F. Koch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 445-448. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 61.82.R, 78.60, 78.66.J https://nasplib.isofts.kiev.ua/handle/123456789/121201 Polarization dependent photoluminescence (PL), time-resolved PL and PL excitation experiments are performed in order to clarify the origin of the linear polarization of the PL of porous silicon excited by linear polarized light. It is shown that this effect, when PL is excited significantly above the detection energy, is not related to a coherent exciton alignment or selective optical excitation of those nanocrystals whose transition dipole moments are oriented parallel to the polarization vector of the exciting light. The experimental results are interpreted in the framework of a dielectric model assuming aspheric nanocrystals. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Polarization properties of the luminescence from silicon nanocrystals Article published earlier |
| spellingShingle | Polarization properties of the luminescence from silicon nanocrystals Diener, J. Kovalev, D. Polisski, G. Koch, F. |
| title | Polarization properties of the luminescence from silicon nanocrystals |
| title_full | Polarization properties of the luminescence from silicon nanocrystals |
| title_fullStr | Polarization properties of the luminescence from silicon nanocrystals |
| title_full_unstemmed | Polarization properties of the luminescence from silicon nanocrystals |
| title_short | Polarization properties of the luminescence from silicon nanocrystals |
| title_sort | polarization properties of the luminescence from silicon nanocrystals |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121201 |
| work_keys_str_mv | AT dienerj polarizationpropertiesoftheluminescencefromsiliconnanocrystals AT kovalevd polarizationpropertiesoftheluminescencefromsiliconnanocrystals AT polisskig polarizationpropertiesoftheluminescencefromsiliconnanocrystals AT kochf polarizationpropertiesoftheluminescencefromsiliconnanocrystals |