Polarization properties of the luminescence from silicon nanocrystals
Polarization dependent photoluminescence (PL), time-resolved PL and PL excitation experiments are performed in order to clarify the origin of the linear polarization of the PL of porous silicon excited by linear polarized light. It is shown that this effect, when PL is excited significantly above th...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2000 |
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121201 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Polarization properties of the luminescence from silicon nanocrystals / J. Diener, D. Kovalev, G. Polisski, F. Koch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 445-448. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121201 |
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Diener, J. Kovalev, D. Polisski, G. Koch, F. 2017-06-13T16:48:28Z 2017-06-13T16:48:28Z 2000 Polarization properties of the luminescence from silicon nanocrystals / J. Diener, D. Kovalev, G. Polisski, F. Koch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 445-448. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 61.82.R, 78.60, 78.66.J https://nasplib.isofts.kiev.ua/handle/123456789/121201 Polarization dependent photoluminescence (PL), time-resolved PL and PL excitation experiments are performed in order to clarify the origin of the linear polarization of the PL of porous silicon excited by linear polarized light. It is shown that this effect, when PL is excited significantly above the detection energy, is not related to a coherent exciton alignment or selective optical excitation of those nanocrystals whose transition dipole moments are oriented parallel to the polarization vector of the exciting light. The experimental results are interpreted in the framework of a dielectric model assuming aspheric nanocrystals. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Polarization properties of the luminescence from silicon nanocrystals Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Polarization properties of the luminescence from silicon nanocrystals |
| spellingShingle |
Polarization properties of the luminescence from silicon nanocrystals Diener, J. Kovalev, D. Polisski, G. Koch, F. |
| title_short |
Polarization properties of the luminescence from silicon nanocrystals |
| title_full |
Polarization properties of the luminescence from silicon nanocrystals |
| title_fullStr |
Polarization properties of the luminescence from silicon nanocrystals |
| title_full_unstemmed |
Polarization properties of the luminescence from silicon nanocrystals |
| title_sort |
polarization properties of the luminescence from silicon nanocrystals |
| author |
Diener, J. Kovalev, D. Polisski, G. Koch, F. |
| author_facet |
Diener, J. Kovalev, D. Polisski, G. Koch, F. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Polarization dependent photoluminescence (PL), time-resolved PL and PL excitation experiments are performed in order to clarify the origin of the linear polarization of the PL of porous silicon excited by linear polarized light. It is shown that this effect, when PL is excited significantly above the detection energy, is not related to a coherent exciton alignment or selective optical excitation of those nanocrystals whose transition dipole moments are oriented parallel to the polarization vector of the exciting light. The experimental results are interpreted in the framework of a dielectric model assuming aspheric nanocrystals.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121201 |
| citation_txt |
Polarization properties of the luminescence from silicon nanocrystals / J. Diener, D. Kovalev, G. Polisski, F. Koch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 445-448. — Бібліогр.: 11 назв. — англ. |
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AT dienerj polarizationpropertiesoftheluminescencefromsiliconnanocrystals AT kovalevd polarizationpropertiesoftheluminescencefromsiliconnanocrystals AT polisskig polarizationpropertiesoftheluminescencefromsiliconnanocrystals AT kochf polarizationpropertiesoftheluminescencefromsiliconnanocrystals |
| first_indexed |
2025-11-28T09:25:10Z |
| last_indexed |
2025-11-28T09:25:10Z |
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