Polarization properties of the luminescence from silicon nanocrystals
Polarization dependent photoluminescence (PL), time-resolved PL and PL excitation experiments are performed in order to clarify the origin of the linear polarization of the PL of porous silicon excited by linear polarized light. It is shown that this effect, when PL is excited significantly above th...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2000 |
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121201 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Polarization properties of the luminescence from silicon nanocrystals / J. Diener, D. Kovalev, G. Polisski, F. Koch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 445-448. — Бібліогр.: 11 назв. — англ. |