The influence of non-uniform deformation on photoelectric properties of crystalline silicon
Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the photoconductivity spectrum drop in the short-wave region when illuminating the st...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2000 |
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121205 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The influence of non-uniform deformation on photoelectric properties of crystalline silicon / O.V. Vakulenko, S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 453-455. — Бібліогр.: 9 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862548986437566464 |
|---|---|
| author | Vakulenko, O.V. Kondratenko, S.V. |
| author_facet | Vakulenko, O.V. Kondratenko, S.V. |
| citation_txt | The influence of non-uniform deformation on photoelectric properties of crystalline silicon / O.V. Vakulenko, S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 453-455. — Бібліогр.: 9 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the photoconductivity spectrum drop in the short-wave region when illuminating the stretched surface. Under constant deformation conditions the PME spectrum form is changed only in the long-wave region. Obtained data are explained by diffusion length decreasing as a consequence of decreasing diffusion coefficient under the influence of a strain gradient.
|
| first_indexed | 2025-11-25T20:35:29Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121205 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-11-25T20:35:29Z |
| publishDate | 2000 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Vakulenko, O.V. Kondratenko, S.V. 2017-06-13T16:50:41Z 2017-06-13T16:50:41Z 2000 The influence of non-uniform deformation on photoelectric properties of crystalline silicon / O.V. Vakulenko, S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 453-455. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 72.40. https://nasplib.isofts.kiev.ua/handle/123456789/121205 Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the photoconductivity spectrum drop in the short-wave region when illuminating the stretched surface. Under constant deformation conditions the PME spectrum form is changed only in the long-wave region. Obtained data are explained by diffusion length decreasing as a consequence of decreasing diffusion coefficient under the influence of a strain gradient. We gratefully acknowledge B.K. Serdega for helpful discussions. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The influence of non-uniform deformation on photoelectric properties of crystalline silicon Article published earlier |
| spellingShingle | The influence of non-uniform deformation on photoelectric properties of crystalline silicon Vakulenko, O.V. Kondratenko, S.V. |
| title | The influence of non-uniform deformation on photoelectric properties of crystalline silicon |
| title_full | The influence of non-uniform deformation on photoelectric properties of crystalline silicon |
| title_fullStr | The influence of non-uniform deformation on photoelectric properties of crystalline silicon |
| title_full_unstemmed | The influence of non-uniform deformation on photoelectric properties of crystalline silicon |
| title_short | The influence of non-uniform deformation on photoelectric properties of crystalline silicon |
| title_sort | influence of non-uniform deformation on photoelectric properties of crystalline silicon |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121205 |
| work_keys_str_mv | AT vakulenkoov theinfluenceofnonuniformdeformationonphotoelectricpropertiesofcrystallinesilicon AT kondratenkosv theinfluenceofnonuniformdeformationonphotoelectricpropertiesofcrystallinesilicon AT vakulenkoov influenceofnonuniformdeformationonphotoelectricpropertiesofcrystallinesilicon AT kondratenkosv influenceofnonuniformdeformationonphotoelectricpropertiesofcrystallinesilicon |