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The influence of non-uniform deformation on photoelectric properties of crystalline silicon

Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the photoconductivity spectrum drop in the short-wave region when illuminating the st...

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Bibliographic Details
Published in:Semiconductor Physics Quantum Electronics & Optoelectronics
Date:2000
Main Authors: Vakulenko, O.V., Kondratenko, S.V.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Access:https://nasplib.isofts.kiev.ua/handle/123456789/121205
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Journal Title:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Cite this:The influence of non-uniform deformation on photoelectric properties of crystalline silicon / O.V. Vakulenko, S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 453-455. — Бібліогр.: 9 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine

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