Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix
Sn–As–P–S glasses were obtained using co-melting of pre-synthesized As₂S₃ and Sn₂P₂S₆. Their structure and composition were confirmed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Crystallization of Sn₂P₂S₆ crystallites from the...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2015 |
| Автори: | , , , , , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121206 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix / Yu.M. Azhniuk, A.V. Gomonnai, O.O. Gomonnai, S.M. Hasynets, F. Kováč, V.V. Lopushansky, I. Petryshynets, V.M. Rubish, D.R.T. Zahn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 248-254. — Бібліогр.: 41 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862749085246685184 |
|---|---|
| author | Azhniuk, Yu.M. Gomonnai, A.V. Gomonnai, O.O. Hasynets, S.M. Kováč, F. Lopushansky, V.V. Petryshynets, I. Rubish, V.M. Zahn, D.R.T. |
| author_facet | Azhniuk, Yu.M. Gomonnai, A.V. Gomonnai, O.O. Hasynets, S.M. Kováč, F. Lopushansky, V.V. Petryshynets, I. Rubish, V.M. Zahn, D.R.T. |
| citation_txt | Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix / Yu.M. Azhniuk, A.V. Gomonnai, O.O. Gomonnai, S.M. Hasynets, F. Kováč, V.V. Lopushansky, I. Petryshynets, V.M. Rubish, D.R.T. Zahn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 248-254. — Бібліогр.: 41 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Sn–As–P–S glasses were obtained using co-melting of pre-synthesized As₂S₃ and Sn₂P₂S₆. Their structure and composition were confirmed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Crystallization of Sn₂P₂S₆ crystallites from the glass matrix is observed at annealing under relatively low temperatures (410…580 K).
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| first_indexed | 2025-12-07T20:58:17Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121206 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T20:58:17Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Azhniuk, Yu.M. Gomonnai, A.V. Gomonnai, O.O. Hasynets, S.M. Kováč, F. Lopushansky, V.V. Petryshynets, I. Rubish, V.M. Zahn, D.R.T. 2017-06-13T16:50:47Z 2017-06-13T16:50:47Z 2015 Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix / Yu.M. Azhniuk, A.V. Gomonnai, O.O. Gomonnai, S.M. Hasynets, F. Kováč, V.V. Lopushansky, I. Petryshynets, V.M. Rubish, D.R.T. Zahn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 248-254. — Бібліогр.: 41 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.248 PACS 64.70.pn, 78.67.-n, 82.80.Gk https://nasplib.isofts.kiev.ua/handle/123456789/121206 Sn–As–P–S glasses were obtained using co-melting of pre-synthesized As₂S₃ and Sn₂P₂S₆. Their structure and composition were confirmed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Crystallization of Sn₂P₂S₆ crystallites from the glass matrix is observed at annealing under relatively low temperatures (410…580 K). Yu.M. Azhniuk is grateful to Deutscher Akademischer Austauschdienst (DAAD) for the support of his research at Chemnitz University of Technology. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix Article published earlier |
| spellingShingle | Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix Azhniuk, Yu.M. Gomonnai, A.V. Gomonnai, O.O. Hasynets, S.M. Kováč, F. Lopushansky, V.V. Petryshynets, I. Rubish, V.M. Zahn, D.R.T. |
| title | Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix |
| title_full | Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix |
| title_fullStr | Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix |
| title_full_unstemmed | Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix |
| title_short | Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix |
| title_sort | annealing-induced formation of sn₂p₂s₆ crystallites in as₂s₃-based glass matrix |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121206 |
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