Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2015
• Hauptverfasser: Azhniuk, Yu.M., Gomonnai, A.V., Gomonnai, O.O., Hasynets, S.M., Kováč, F., Lopushansky, V.V., Petryshynets, I., Rubish, V.M., Zahn, D.R.T.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121206
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix / Yu.M. Azhniuk, A.V. Gomonnai, O.O. Gomonnai, S.M. Hasynets, F. Kováč, V.V. Lopushansky, I. Petryshynets, V.M. Rubish, D.R.T. Zahn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 248-254. — Бібліогр.: 41 назв. — англ.

Sn–As–P–S glasses were obtained using co-melting of pre-synthesized As₂S₃ and Sn₂P₂S₆. Their structure and composition were confirmed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Crystallization of Sn₂P₂S₆ crystallites from the...