Ohmic contacts based on Pd to indium phosphide Gunn diodes
Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact resistance measured at room temperature was about 7·10⁻⁵ Ohm·cm². Voltage-curre...
Gespeichert in:
| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Datum: | 2015 |
| Hauptverfasser: | , , , , , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
|
| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121208 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Ohmic contacts based on Pd to indium phosphide Gunn diodes / A.E. Belyaev, N.S. Boltovets, A.V. Bobyl, A.V. Zorenko, I.N. Arsentiev, V.P. Kladko, V.M. Kovtonyuk, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 317-323. — Бібліогр.: 34 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862711276739756032 |
|---|---|
| author | Belyaev, A.E. Boltovets, N.S. Bobyl, A.V. Zorenko, A.V. Arsentiev, I.N. Kladko, V.P. Kovtonyuk, V.M. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. Slipokurov, V.S. Slepova, A.S. Safryuk, N.V. Gudymenko, A.I. Shynkarenko, V.V. |
| author_facet | Belyaev, A.E. Boltovets, N.S. Bobyl, A.V. Zorenko, A.V. Arsentiev, I.N. Kladko, V.P. Kovtonyuk, V.M. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. Slipokurov, V.S. Slepova, A.S. Safryuk, N.V. Gudymenko, A.I. Shynkarenko, V.V. |
| citation_txt | Ohmic contacts based on Pd to indium phosphide Gunn diodes / A.E. Belyaev, N.S. Boltovets, A.V. Bobyl, A.V. Zorenko, I.N. Arsentiev, V.P. Kladko, V.M. Kovtonyuk, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 317-323. — Бібліогр.: 34 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact resistance measured at room temperature was about 7·10⁻⁵ Ohm·cm². Voltage-current characteristics within the temperature range 110 to 380 K are linear. Gunn diodes with such contacts, which were made as a straight mesa-structure in a pulsed mode (pulse duration of 100 ns, pulse ratio of 1000, operating current of 2.2 A), generated the microwave power ~10 mW in the V-band.
|
| first_indexed | 2025-12-07T17:29:50Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121208 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T17:29:50Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Belyaev, A.E. Boltovets, N.S. Bobyl, A.V. Zorenko, A.V. Arsentiev, I.N. Kladko, V.P. Kovtonyuk, V.M. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. Slipokurov, V.S. Slepova, A.S. Safryuk, N.V. Gudymenko, A.I. Shynkarenko, V.V. 2017-06-13T16:51:23Z 2017-06-13T16:51:23Z 2015 Ohmic contacts based on Pd to indium phosphide Gunn diodes / A.E. Belyaev, N.S. Boltovets, A.V. Bobyl, A.V. Zorenko, I.N. Arsentiev, V.P. Kladko, V.M. Kovtonyuk, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 317-323. — Бібліогр.: 34 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.317 PACS 73.40.Cg, 73.40.Ns, 85.30.Fg https://nasplib.isofts.kiev.ua/handle/123456789/121208 Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact resistance measured at room temperature was about 7·10⁻⁵ Ohm·cm². Voltage-current characteristics within the temperature range 110 to 380 K are linear. Gunn diodes with such contacts, which were made as a straight mesa-structure in a pulsed mode (pulse duration of 100 ns, pulse ratio of 1000, operating current of 2.2 A), generated the microwave power ~10 mW in the V-band. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Ohmic contacts based on Pd to indium phosphide Gunn diodes Article published earlier |
| spellingShingle | Ohmic contacts based on Pd to indium phosphide Gunn diodes Belyaev, A.E. Boltovets, N.S. Bobyl, A.V. Zorenko, A.V. Arsentiev, I.N. Kladko, V.P. Kovtonyuk, V.M. Konakova, R.V. Kudryk, Ya.Ya. Sachenko, A.V. Slipokurov, V.S. Slepova, A.S. Safryuk, N.V. Gudymenko, A.I. Shynkarenko, V.V. |
| title | Ohmic contacts based on Pd to indium phosphide Gunn diodes |
| title_full | Ohmic contacts based on Pd to indium phosphide Gunn diodes |
| title_fullStr | Ohmic contacts based on Pd to indium phosphide Gunn diodes |
| title_full_unstemmed | Ohmic contacts based on Pd to indium phosphide Gunn diodes |
| title_short | Ohmic contacts based on Pd to indium phosphide Gunn diodes |
| title_sort | ohmic contacts based on pd to indium phosphide gunn diodes |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121208 |
| work_keys_str_mv | AT belyaevae ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT boltovetsns ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT bobylav ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT zorenkoav ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT arsentievin ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT kladkovp ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT kovtonyukvm ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT konakovarv ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT kudrykyaya ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT sachenkoav ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT slipokurovvs ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT slepovaas ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT safryuknv ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT gudymenkoai ohmiccontactsbasedonpdtoindiumphosphidegunndiodes AT shynkarenkovv ohmiccontactsbasedonpdtoindiumphosphidegunndiodes |