Heat flux effect on photoenhanced and dark silver motion in a thin As₂S₃ layer

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2000
• ISSN: 1560-8034
• Hauptverfasser: Kudryavtsev, A.A., Michailovskaya, E.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121210
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Heat flux effect on photoenhanced and dark silver motion in a thin As₂S₃ layer / A.A. Kudryavtsev, E.V. Michailovskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 469-474. — Бібліогр.: 12 назв. — англ.

The influence of a heat flux on the rate of photoenhanced and dark Ag transfer in the lightsensitive thin layer As₂S₃-Ag structure was investigated. It was found that the Ag flux increased when a heat flux had the same direction and fell down when the heat flux had an opposite direction. The changes...