Field emission of electrons from laser produced silicon tip arrays

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2000
• Hauptverfasser: Evtukh, A.A., Kaganovich, E.B., Litovchenko, V.G., Litvin, Yu.M., Fedin, D.V., Manoilov, E.G., Svechnikov, S.V.
• Format: Artikel
• Sprache: Englisch
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121211
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Field emission of electrons from laser produced silicon tip arrays / A.A. Evtukh, E.B. Kaganovich, V.G. Litovchenko, Yu.M. Litvin, D.V. Fedin, E.G. Manoilov, S.V. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 474-478. — Бібліогр.: 16 назв. — англ.

The new preparation method of silicon tips with nanocomposite structure, namely laser modification of silicon is developed. The laser direct-write process has been applied, one by one (single) laser pulses formed the single rather uniform conical tips. In this process a silicon substrate is locally...