Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator

Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant acceleration of short-circuit current growth. The reason of it is the shif...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2015
Hauptverfasser: Sachenko, A.V., Kostylyov, V.P., Korkishko, R.M., Kulish, M.R., Sokolovskyi, I.O., Vlasiuk, V.M., Khomenko, D.V.
Format: Artikel
Sprache:English
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121212
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator / A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, M.R. Kulish, I.O. Sokolovskyi, V.M. Vlasiuk, D.V. Khomenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 259-266. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id nasplib_isofts_kiev_ua-123456789-121212
record_format dspace
spelling Sachenko, A.V.
Kostylyov, V.P.
Korkishko, R.M.
Kulish, M.R.
Sokolovskyi, I.O.
Vlasiuk, V.M.
Khomenko, D.V.
2017-06-13T16:53:37Z
2017-06-13T16:53:37Z
2015
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator / A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, M.R. Kulish, I.O. Sokolovskyi, V.M. Vlasiuk, D.V. Khomenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 259-266. — Бібліогр.: 18 назв. — англ.
1560-8034
DOI: 10.15407/spqeo18.03.259
PACS 88.40.hj, 88.40.jj
https://nasplib.isofts.kiev.ua/handle/123456789/121212
Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant acceleration of short-circuit current growth. The reason of it is the shift of simulator spectrum to the higher wavelengths region as compared to the Sun one. This effect leads to a reduction in efficiency decrease for simulated sunlight with the increase of temperature. It should be taken into account in efficiency loss calculation with increase in the operating temperature. It has been shown that the results of theoretical modeling the temperature dependences for the short-circuit current density, open-circuit voltage and photoconversion efficiency are in good agreement with the experimental data obtained using the sunlight simulator. These results could be used to develop methods for investigation of temperature dependences of solar cell characteristics by using various sunlight simulators.
en
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Semiconductor Physics Quantum Electronics & Optoelectronics
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
Article
published earlier
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
title Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
spellingShingle Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
Sachenko, A.V.
Kostylyov, V.P.
Korkishko, R.M.
Kulish, M.R.
Sokolovskyi, I.O.
Vlasiuk, V.M.
Khomenko, D.V.
title_short Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
title_full Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
title_fullStr Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
title_full_unstemmed Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
title_sort peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
author Sachenko, A.V.
Kostylyov, V.P.
Korkishko, R.M.
Kulish, M.R.
Sokolovskyi, I.O.
Vlasiuk, V.M.
Khomenko, D.V.
author_facet Sachenko, A.V.
Kostylyov, V.P.
Korkishko, R.M.
Kulish, M.R.
Sokolovskyi, I.O.
Vlasiuk, V.M.
Khomenko, D.V.
publishDate 2015
language English
container_title Semiconductor Physics Quantum Electronics & Optoelectronics
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
format Article
description Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant acceleration of short-circuit current growth. The reason of it is the shift of simulator spectrum to the higher wavelengths region as compared to the Sun one. This effect leads to a reduction in efficiency decrease for simulated sunlight with the increase of temperature. It should be taken into account in efficiency loss calculation with increase in the operating temperature. It has been shown that the results of theoretical modeling the temperature dependences for the short-circuit current density, open-circuit voltage and photoconversion efficiency are in good agreement with the experimental data obtained using the sunlight simulator. These results could be used to develop methods for investigation of temperature dependences of solar cell characteristics by using various sunlight simulators.
issn 1560-8034
url https://nasplib.isofts.kiev.ua/handle/123456789/121212
citation_txt Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator / A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, M.R. Kulish, I.O. Sokolovskyi, V.M. Vlasiuk, D.V. Khomenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 259-266. — Бібліогр.: 18 назв. — англ.
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