Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant acceleration of short-circuit current growth. The reason of it is the shif...
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| Veröffentlicht in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Datum: | 2015 |
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| Sprache: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Online Zugang: | https://nasplib.isofts.kiev.ua/handle/123456789/121212 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Zitieren: | Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator / A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, M.R. Kulish, I.O. Sokolovskyi, V.M. Vlasiuk, D.V. Khomenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 259-266. — Бібліогр.: 18 назв. — англ. |
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Sachenko, A.V. Kostylyov, V.P. Korkishko, R.M. Kulish, M.R. Sokolovskyi, I.O. Vlasiuk, V.M. Khomenko, D.V. 2017-06-13T16:53:37Z 2017-06-13T16:53:37Z 2015 Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator / A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, M.R. Kulish, I.O. Sokolovskyi, V.M. Vlasiuk, D.V. Khomenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 259-266. — Бібліогр.: 18 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.259 PACS 88.40.hj, 88.40.jj https://nasplib.isofts.kiev.ua/handle/123456789/121212 Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant acceleration of short-circuit current growth. The reason of it is the shift of simulator spectrum to the higher wavelengths region as compared to the Sun one. This effect leads to a reduction in efficiency decrease for simulated sunlight with the increase of temperature. It should be taken into account in efficiency loss calculation with increase in the operating temperature. It has been shown that the results of theoretical modeling the temperature dependences for the short-circuit current density, open-circuit voltage and photoconversion efficiency are in good agreement with the experimental data obtained using the sunlight simulator. These results could be used to develop methods for investigation of temperature dependences of solar cell characteristics by using various sunlight simulators. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator |
| spellingShingle |
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator Sachenko, A.V. Kostylyov, V.P. Korkishko, R.M. Kulish, M.R. Sokolovskyi, I.O. Vlasiuk, V.M. Khomenko, D.V. |
| title_short |
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator |
| title_full |
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator |
| title_fullStr |
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator |
| title_full_unstemmed |
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator |
| title_sort |
peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator |
| author |
Sachenko, A.V. Kostylyov, V.P. Korkishko, R.M. Kulish, M.R. Sokolovskyi, I.O. Vlasiuk, V.M. Khomenko, D.V. |
| author_facet |
Sachenko, A.V. Kostylyov, V.P. Korkishko, R.M. Kulish, M.R. Sokolovskyi, I.O. Vlasiuk, V.M. Khomenko, D.V. |
| publishDate |
2015 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant acceleration of short-circuit current growth. The reason of it is the shift of simulator spectrum to the higher wavelengths region as compared to the Sun one. This effect leads to a reduction in efficiency decrease for simulated sunlight with the increase of temperature. It should be taken into account in efficiency loss calculation with increase in the operating temperature. It has been shown that the results of theoretical modeling the temperature dependences for the short-circuit current density, open-circuit voltage and photoconversion efficiency are in good agreement with the experimental data obtained using the sunlight simulator. These results could be used to develop methods for investigation of temperature dependences of solar cell characteristics by using various sunlight simulators.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121212 |
| citation_txt |
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator / A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, M.R. Kulish, I.O. Sokolovskyi, V.M. Vlasiuk, D.V. Khomenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 259-266. — Бібліогр.: 18 назв. — англ. |
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2025-11-28T12:06:03Z |
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