Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2015
• Main Authors: Sachenko, A.V., Kostylyov, V.P., Korkishko, R.M., Kulish, M.R., Sokolovskyi, I.O., Vlasiuk, V.M., Khomenko, D.V.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121212
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator / A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, M.R. Kulish, I.O. Sokolovskyi, V.M. Vlasiuk, D.V. Khomenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 259-266. — Бібліогр.: 18 назв. — англ.

Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant acceleration of short-circuit current growth. The reason of it is the shif...