Carrier transport mechanisms in reverse biased InSb p-n junctions
Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained ex...
Saved in:
| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2015 |
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
|
| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121213 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Carrier transport mechanisms in reverse biased InSb p-n junctions / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 267-271. — Бібліогр.: 28 назв. — англ. |
Institution
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
nasplib_isofts_kiev_ua-123456789-121213 |
|---|---|
| record_format |
dspace |
| spelling |
Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. 2017-06-13T16:54:06Z 2017-06-13T16:54:06Z 2015 Carrier transport mechanisms in reverse biased InSb p-n junctions / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 267-271. — Бібліогр.: 28 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.267 PACS 73.40.Kp, 73.40.Gk https://nasplib.isofts.kiev.ua/handle/123456789/121213 Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained experimental data show that local inhomogeneities in the depletion region are responsible for the excess tunneling current observed in the reverse biased junctions. The inhomogeneities have been attributed to dislocations, precipitates or other extended defects. A phenomenological model is proposed to explain experimental data. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Carrier transport mechanisms in reverse biased InSb p-n junctions Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Carrier transport mechanisms in reverse biased InSb p-n junctions |
| spellingShingle |
Carrier transport mechanisms in reverse biased InSb p-n junctions Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| title_short |
Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_full |
Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_fullStr |
Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_full_unstemmed |
Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_sort |
carrier transport mechanisms in reverse biased insb p-n junctions |
| author |
Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| author_facet |
Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| publishDate |
2015 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained experimental data show that local inhomogeneities in the depletion region are responsible for the excess tunneling current observed in the reverse biased junctions. The inhomogeneities have been attributed to dislocations, precipitates or other extended defects. A phenomenological model is proposed to explain experimental data.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121213 |
| citation_txt |
Carrier transport mechanisms in reverse biased InSb p-n junctions / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 267-271. — Бібліогр.: 28 назв. — англ. |
| work_keys_str_mv |
AT sukachav carriertransportmechanismsinreversebiasedinsbpnjunctions AT tetyorkinvv carriertransportmechanismsinreversebiasedinsbpnjunctions AT tkachukai carriertransportmechanismsinreversebiasedinsbpnjunctions |
| first_indexed |
2025-12-07T13:26:11Z |
| last_indexed |
2025-12-07T13:26:11Z |
| _version_ |
1850856148203208704 |