Carrier transport mechanisms in reverse biased InSb p-n junctions
Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained ex...
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| Опубліковано в: : | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Дата: | 2015 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Онлайн доступ: | https://nasplib.isofts.kiev.ua/handle/123456789/121213 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Carrier transport mechanisms in reverse biased InSb p-n junctions / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 267-271. — Бібліогр.: 28 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| _version_ | 1862621997955022848 |
|---|---|
| author | Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| author_facet | Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| citation_txt | Carrier transport mechanisms in reverse biased InSb p-n junctions / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 267-271. — Бібліогр.: 28 назв. — англ. |
| collection | DSpace DC |
| container_title | Semiconductor Physics Quantum Electronics & Optoelectronics |
| description | Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained experimental data show that local inhomogeneities in the depletion region are responsible for the excess tunneling current observed in the reverse biased junctions. The inhomogeneities have been attributed to dislocations, precipitates or other extended defects. A phenomenological model is proposed to explain experimental data.
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| first_indexed | 2025-12-07T13:26:11Z |
| format | Article |
| fulltext | |
| id | nasplib_isofts_kiev_ua-123456789-121213 |
| institution | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| issn | 1560-8034 |
| language | English |
| last_indexed | 2025-12-07T13:26:11Z |
| publishDate | 2015 |
| publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| record_format | dspace |
| spelling | Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. 2017-06-13T16:54:06Z 2017-06-13T16:54:06Z 2015 Carrier transport mechanisms in reverse biased InSb p-n junctions / A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 267-271. — Бібліогр.: 28 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.267 PACS 73.40.Kp, 73.40.Gk https://nasplib.isofts.kiev.ua/handle/123456789/121213 Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the reverse current as a function of bias voltage and temperature. The obtained experimental data show that local inhomogeneities in the depletion region are responsible for the excess tunneling current observed in the reverse biased junctions. The inhomogeneities have been attributed to dislocations, precipitates or other extended defects. A phenomenological model is proposed to explain experimental data. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Carrier transport mechanisms in reverse biased InSb p-n junctions Article published earlier |
| spellingShingle | Carrier transport mechanisms in reverse biased InSb p-n junctions Sukach, A.V. Tetyorkin, V.V. Tkachuk, A.I. |
| title | Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_full | Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_fullStr | Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_full_unstemmed | Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_short | Carrier transport mechanisms in reverse biased InSb p-n junctions |
| title_sort | carrier transport mechanisms in reverse biased insb p-n junctions |
| url | https://nasplib.isofts.kiev.ua/handle/123456789/121213 |
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