Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum
Cd₀.₂₅Hg₀.₇₅Se films received by laser evaporation method in conditions of static vacuum are investigated. Optimum temperature of a substrate is ascertained using structural and electrophysical measurements. It is shown that the used method enables one to receive films of CdxHg₁₋xSe solid solutions...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
|---|---|
| Date: | 2000 |
| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121216 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum / B.N. Gritsook, I.M. Fodchoock, S.V. Nichiy, U.S. Paranchich, R.L. Politanskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 460-462. — Бібліогр.: 9 назв. — англ. |
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Gritsook, B.N. Fodchoock, I.M. Nichiy, S.V. Paranchich, U.S. Politanskiy, R.L. 2017-06-13T16:55:27Z 2017-06-13T16:55:27Z 2000 Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum / B.N. Gritsook, I.M. Fodchoock, S.V. Nichiy, U.S. Paranchich, R.L. Politanskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 460-462. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 70.61.J https://nasplib.isofts.kiev.ua/handle/123456789/121216 Cd₀.₂₅Hg₀.₇₅Se films received by laser evaporation method in conditions of static vacuum are investigated. Optimum temperature of a substrate is ascertained using structural and electrophysical measurements. It is shown that the used method enables one to receive films of CdxHg₁₋xSe solid solutions close to bulk material by their properties. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum Article published earlier |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| title |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum |
| spellingShingle |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum Gritsook, B.N. Fodchoock, I.M. Nichiy, S.V. Paranchich, U.S. Politanskiy, R.L. |
| title_short |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum |
| title_full |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum |
| title_fullStr |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum |
| title_full_unstemmed |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum |
| title_sort |
growing cd₀.₂₅hg₀.₇₅se layers by laser evaporation in static vacuum |
| author |
Gritsook, B.N. Fodchoock, I.M. Nichiy, S.V. Paranchich, U.S. Politanskiy, R.L. |
| author_facet |
Gritsook, B.N. Fodchoock, I.M. Nichiy, S.V. Paranchich, U.S. Politanskiy, R.L. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
Cd₀.₂₅Hg₀.₇₅Se films received by laser evaporation method in conditions of static vacuum are investigated. Optimum temperature of a substrate is ascertained using structural and electrophysical measurements. It is shown that the used method enables one to receive films of CdxHg₁₋xSe solid solutions close to bulk material by their properties.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121216 |
| citation_txt |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum / B.N. Gritsook, I.M. Fodchoock, S.V. Nichiy, U.S. Paranchich, R.L. Politanskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 460-462. — Бібліогр.: 9 назв. — англ. |
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| first_indexed |
2025-12-07T18:30:38Z |
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2025-12-07T18:30:38Z |
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