Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum

• Veröffentlicht in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Datum: 2000
• Hauptverfasser: Gritsook, B.N., Fodchoock, I.M., Nichiy, S.V., Paranchich, U.S., Politanskiy, R.L.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Zugang: https://nasplib.isofts.kiev.ua/handle/123456789/121216
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Zitieren: Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum / B.N. Gritsook, I.M. Fodchoock, S.V. Nichiy, U.S. Paranchich, R.L. Politanskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 460-462. — Бібліогр.: 9 назв. — англ.

Cd₀.₂₅Hg₀.₇₅Se films received by laser evaporation method in conditions of static vacuum are investigated. Optimum temperature of a substrate is ascertained using structural and electrophysical measurements. It is shown that the used method enables one to receive films of CdxHg₁₋xSe solid solutions...