Baranskii, P., Babich, V., Venger, E., & Dotsenko, Y. (2000). The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation. Semiconductor Physics Quantum Electronics & Optoelectronics.
Chicago-Zitierstil (17. Ausg.)Baranskii, P.I, V.M Babich, E.F Venger, und Yu.P Dotsenko. "The Features of Magnetoresistance of N-Si Doped with Phosphorus from the Melt and by Nuclear Transmutation." Semiconductor Physics Quantum Electronics & Optoelectronics 2000.
MLA-Zitierstil (8. Ausg.)Baranskii, P.I, et al. "The Features of Magnetoresistance of N-Si Doped with Phosphorus from the Melt and by Nuclear Transmutation." Semiconductor Physics Quantum Electronics & Optoelectronics, 2000.
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