The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation
The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in the field dependencies of magnetoresistance for crystals doped from melt and t...
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| Published in: | Semiconductor Physics Quantum Electronics & Optoelectronics |
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| Date: | 2000 |
| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Online Access: | https://nasplib.isofts.kiev.ua/handle/123456789/121218 |
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| Journal Title: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Cite this: | The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation / P.I. Baranskii, V.M. Babich, E.F. Venger, Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 449-452. — Бібліогр.: 12 назв. — англ. |
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Baranskii, P.I. Babich, V.M. Venger, E.F. Dotsenko, Yu.P. 2017-06-13T16:57:00Z 2017-06-13T16:57:00Z 2000 The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation / P.I. Baranskii, V.M. Babich, E.F. Venger, Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 449-452. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 61.72.T, 72.20.M https://nasplib.isofts.kiev.ua/handle/123456789/121218 The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in the field dependencies of magnetoresistance for crystals doped from melt and those doped by nuclear transmutation. It is shown that mag-netoresistance ∆ρ⊥/ρ₀ in classical strong magnetic fields is due to the statistically distributed Herring-type defects in the crystals studied. en Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України Semiconductor Physics Quantum Electronics & Optoelectronics The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation Article published earlier |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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| title |
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation |
| spellingShingle |
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation Baranskii, P.I. Babich, V.M. Venger, E.F. Dotsenko, Yu.P. |
| title_short |
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation |
| title_full |
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation |
| title_fullStr |
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation |
| title_full_unstemmed |
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation |
| title_sort |
features of magnetoresistance of n-si doped with phosphorus from the melt and by nuclear transmutation |
| author |
Baranskii, P.I. Babich, V.M. Venger, E.F. Dotsenko, Yu.P. |
| author_facet |
Baranskii, P.I. Babich, V.M. Venger, E.F. Dotsenko, Yu.P. |
| publishDate |
2000 |
| language |
English |
| container_title |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| format |
Article |
| description |
The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in the field dependencies of magnetoresistance for crystals doped from melt and those doped by nuclear transmutation. It is shown that mag-netoresistance ∆ρ⊥/ρ₀ in classical strong magnetic fields is due to the statistically distributed Herring-type defects in the crystals studied.
|
| issn |
1560-8034 |
| url |
https://nasplib.isofts.kiev.ua/handle/123456789/121218 |
| citation_txt |
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation / P.I. Baranskii, V.M. Babich, E.F. Venger, Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 449-452. — Бібліогр.: 12 назв. — англ. |
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2025-12-07T19:09:44Z |
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