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The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in the field dependencies of magnetoresistance for crystals doped from melt and t...

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Veröffentlicht in:Semiconductor Physics Quantum Electronics & Optoelectronics
Datum:2000
Hauptverfasser: Baranskii, P.I., Babich, V.M., Venger, E.F., Dotsenko, Yu.P.
Format: Artikel
Sprache:Englisch
Veröffentlicht: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Online Zugang:https://nasplib.isofts.kiev.ua/handle/123456789/121218
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Zitieren:The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation / P.I. Baranskii, V.M. Babich, E.F. Venger, Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 449-452. — Бібліогр.: 12 назв. — англ.

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