The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

• Published in: Semiconductor Physics Quantum Electronics & Optoelectronics
• Date: 2000
• ISSN: 1560-8034
• Main Authors: Baranskii, P.I., Babich, V.M., Venger, E.F., Dotsenko, Yu.P.
• Format: Article
• Language: English
• Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Online Access: https://nasplib.isofts.kiev.ua/handle/123456789/121218
• Journal Title: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Cite this: The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation / P.I. Baranskii, V.M. Babich, E.F. Venger, Yu.P. Dotsenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 449-452. — Бібліогр.: 12 назв. — англ.

The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in the field dependencies of magnetoresistance for crystals doped from melt and t...